Single-crystalline wurtzite GaN nanowires and zigzagged nanostructures fabricated by sublimation sandwich method

Hydride-assisted growth of GaN nanowires on Au/Si(001) via the reaction of Ga with NH3 and H2

“…More specifically InN [9], GaN [10] and AlN [11] NWs but also In x Ga 1 À x N NWs [12] have been grown and their transport and optical properties have been investigated. GaN NWs in particular have been grown by a variety of methods including metal organic chemical vapor deposition (MOCVD) [13] and molecular beam epitaxy (MBE) [14,15] but also via the direct nitridation of Ga with NH 3 [16][17][18][19][20][21][22][23][24]. In addition GaN NWs have been obtained by the reaction of Ga:GaN [25], Ga:SiO 2 [26] and Ga:GaN:CNT [27] with NH 3 but also at temperatures as low as 650 1C using Ga:CaF 2 [28] or (CH 3 COCHCOCH 3 ) 3 Ga [29].…”

“…Most of these GaN NWs have been grown via the direct reaction of Ga with NH 3 using Ar as a carrier gas between 900 and 1100 1C on a broad variety of substrates e.g. 6H-SiC [24] Al 2 O 3 [26], LaAlO 3 [32], Si [27] using various catalysts such as InCl 3 [17], In, Fe [19], Ni [19], Au [21] and NiO [26]. The GaN NWs crystallise in the hexagonal wurtzite structure and their diameters typically vary between 10 and 50 nm.…”

Nanomechanical properties of AlN(103) thin films by nanoindentation

“…Wide-bandgap III-V nitride semiconductors have received much attention because of their importance in both scientific research and technological applications [1,2]. Among the group III nitrides, AlN exhibits the largest direct band gap (6.2 eV) [3], a high melting point (3237 K), and a high thermal conductivity (285 W/mK) [4].…”

Preparation and annealing of GaN/Cu core-shell nanowires

“…Due to its unique properties that include a large direct bandgap, strong interatomic bonds, and high thermal conductivity [8], gallium nitride (GaN) can be used in the formulation of light-emitting and optoelectronic devices [9,10]. Thus, the synthesis of GaN nanowires has been intensively studied [11][12][13][14]. On the other hand, copper (Cu) nanowires display many useful physical properties; they are particularly suitable for applications in nanodevices owing to their low electrical resistivity and low cost [15].…”