Three-Dimensional Networked Nanoporous Ta2O5–x Memory System for Ultrahigh Density Storage

Wang, Gunuk; Lee, Jae Hwang; Yang, Yang; Ruan, Gedeng; Kim, Nam Dong; Ji, Yongsung; Tour, James M.

doi:10.1021/acs.nanolett.5b02190

Cited by 52 publications

(77 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…

Memory cell density could be increased by using cross-point array devices or by scaling down the memory cell size. [21][22][23][24] Consequently, OHPs could extend the memory applications to high-density information storage by using a CMOS-compatible process such as vapor deposition.Vapor deposition methods such as hybrid chemical deposition [25][26][27] and sequential vapor deposition [28][29][30][31][32] have been widely used to deposit OHPs because these methods can realize highquality films that yield efficient, largescale photovoltaic devices. [21][22][23][24] Consequently, OHPs could extend the memory applications to high-density information storage by using a CMOS-compatible process such as vapor deposition.

Vapor deposition methods such as hybrid chemical deposition [25][26][27] and sequential vapor deposition [28][29][30][31][32] have been widely used to deposit OHPs because these methods can realize highquality films that yield efficient, largescale photovoltaic devices.

…”

mentioning

confidence: 99%

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

2017

View full text Add to dashboard Cite

The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH NH PbI layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >10 s. Moreover, the use of sequential vapor deposition is extended to deposit CH NH PbI as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity.

show abstract

“…

…”

mentioning

confidence: 99%

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

2017

View full text Add to dashboard Cite

show abstract

“…About 10 nm (half of the entire thickness) was etched by Ar plasma sputtering before XPS measurements. The O 1 s spectra of the Ta 2 O 5−x layers were de-convoluted to obtain two peaks at 530.5 eV at 532.0 eV 42 – 44 . The first oxygen peak depicts oxygen bonded in stoichiometric Ta 2 O 5 43 , while the second oxygen peak indicates oxygen-deficient Ta 2 O 5−x , reflecting the presence of unbonded oxygen molecules (oxygen interstitials) or oxygen vacancies.…”

Section: Resultsmentioning

confidence: 99%

Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching

Kim

Baek

Yang

et al. 2018

Sci Rep

View full text Add to dashboard Cite

Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic alternative electrodes with thermally robust resistive switching characteristics in as-grown and high-temperature annealed states. Here, we studied the electrical characteristics of Ta2O5−x oxide-based bipolar resistive frames for various TaNx bottoms. Control of the nitrogen content of the TaNx electrode is a key factor that governs variations in its oxygen affinity and structural phase. We analyzed the composition and chemical bonding states of as-grown and annealed Ta2O5−x and TaNx layers and characterized the TaNx electrode-dependent switching behavior in terms of the electrode’s oxygen affinity. Our experimental findings can aid the development of advanced resistive switching devices with thermal stability up to 400 °C.

show abstract

“…2c), which may be influenced by the junction asymmetry. 39,40 The multiple switching conductances of the TaO y /NP TaO x memristor controlled by the input voltages can be utilized as variable synaptic weights for the artificial synapse. The maximum non-linearity of the devices was ≈10 4 ; this value was obtained from the current ratio between the read voltage (defined as V r = V S /2) and −V r in the ON state and is comparable to previously reported values for 1D-1R memory devices in a densely packed crossbar array ( Supplementary Information, Fig.…”

Section: Single Tao Y /Np Tao X Memristormentioning

confidence: 99%

A self-rectifying TaOy/nanoporous TaOx memristor synaptic array for learning and energy-efficient neuromorphic systems

et al. 2018

Self Cite

View full text Add to dashboard Cite

The human brain intrinsically operates with a large number of synapses, more than 10 15. Therefore, one of the most critical requirements for constructing artificial neural networks (ANNs) is to achieve extremely dense synaptic array devices, for which the crossbar architecture containing an artificial synaptic node at each cross is indispensable. However, crossbar arrays suffer from the undesired leakage of signals through neighboring cells, which is a major challenge for implementing ANNs. In this work, we show that this challenge can be overcome by using Pt/TaO y / nanoporous (NP) TaO x /Ta memristor synapses because of their self-rectifying behavior, which is capable of suppressing unwanted leakage pathways. Moreover, our synaptic device exhibits high non-linearity (up to 10 4), low synapse coupling (S.C, up to 4.00 × 10 −5), acceptable endurance (5000 cycles at 85°C), sweeping (1000 sweeps), retention stability and acceptable cell uniformity. We also demonstrated essential synaptic functions, such as long-term potentiation (LTP), long-term depression (LTD), and spiking-timing-dependent plasticity (STDP), and simulated the recognition accuracy depending on the S.C for MNIST handwritten digit images. Based on the average S.C (1.60 × 10 −4) in the fabricated crossbar array, we confirmed that our memristive synapse was able to achieve an 89.08% recognition accuracy after only 15 training epochs.

show abstract

Three-Dimensional Networked Nanoporous Ta₂O_5–x Memory System for Ultrahigh Density Storage

Cited by 52 publications

References 27 publications

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching

A self-rectifying TaOy/nanoporous TaOx memristor synaptic array for learning and energy-efficient neuromorphic systems

Contact Info

Product

Resources

About