Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si

Mangelinck, Dominique; Hoummada, K.; Portavoce, A.; Perrin, C.; Daineche, Rachid; Descoins, Marion; Larson, David J.; Clifton, P. H.

doi:10.1016/j.scriptamat.2009.12.044

Cited by 56 publications

(25 citation statements)

References 15 publications

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“…Moreover, the fact that Pt appears highly concentrated in the NiSi seed layer during the initial stages of monosilicide growth further strengthens this idea. 12 On the other hand, recent findings by Mangelinck et al 30 show FIG. 5.…”

Section: Discussionmentioning

confidence: 90%

“…Additionally, there is an indication that the high Pt content in the initial monosilicide seed layer limits the lateral grain growth, and thus reduces the size of the Ni 1Àx Pt x Si grains. 30 Increasing the initial Pt concentration could thus alter the relative densities of the grain boundary and lattice diffusion paths in the monosilicide. However, from this type of experiments, it is impossible to decouple lattice diffusion from grain boundary diffusion in order to study the influence of Pt on either mechanism.…”

Section: Discussionmentioning

confidence: 99%

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On the growth kinetics of Ni(Pt) silicide thin films

Demeulemeester

Smeets

Comrie

et al. 2013

Journal of Applied Physics

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We report on the effect of Pt on the growth kinetics of d-Ni 2 Si and Ni 1Àx Pt x Si thin films formed by solid phase reaction of a Ni(Pt) alloyed thin film on Si(100). The study was performed by real-time Rutherford backscattering spectrometry examining the silicide growth rates for initial Pt concentrations of 0, 1, 3, 7, and 10 at. % relative to the Ni content. Pt was found to exert a drastic effect on the growth kinetics of both phases. d-Ni 2 Si growth is slowed down tremendously, which results in the simultaneous growth of this phase with Ni 1Àx Pt x Si. Activation energies extracted for the Ni 1Àx Pt x Si growth process exhibit an increase from E a ¼ 1.35 6 0.06 eV for binary NiSi to E a ¼ 2.7 6 0.2 eV for Ni 1Àx Pt x Si with an initial Pt concentration of 3 at. %. Further increasing the Pt content to 10 at. % merely increases the activation energy for Ni 1Àx Pt x Si growth to E a ¼ 3.1 6 0.5 eV. V C 2013 AIP Publishing LLC [http://dx

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Section: Discussionmentioning

confidence: 90%

Section: Discussionmentioning

confidence: 99%

On the growth kinetics of Ni(Pt) silicide thin films

Demeulemeester

Smeets

Comrie

et al. 2013

Journal of Applied Physics

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“…However, compared to the complete extrusion of Pd from the growing Ni 2 Si phase in the present work, a small amount of Pt still decorates the Ni 2 Si grain boundaries. 26 At the initiation of monosilicide formation, Pt rapidly redistributes due to the incorporation of Pt in the growing NiSi seeds or the formation of a Pt-silicide. This strongly dissimilar behavior is a result of the distinct formation temperatures of PdSi (above 730 C) compared to PtSi and NiSi (both around 300 C), allowing direct formation and solid solubility of PtSi and NiSi, in contrast to PdSi and NiSi.…”

Section: Resultsmentioning

confidence: 99%

On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction

Schrauwen

Demeulemeester

Kumar

et al. 2013

Journal of Applied Physics

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During the solid phase reaction of a Ni(Pd) alloy with Si(100), phase separation of binary Ni-and Pd-silicides occurs. The PdSi monosilicide nucleates at temperatures significantly below the widely accepted nucleation temperature of the binary system. The decrease in nucleation temperature originates from the presence of the isomorphous NiSi, lowering the interface energy for PdSi nucleation. Despite the mutual solubility of NiSi and PdSi, the two binaries coexist in a temperature window of 100 C. Only above 700 C a Ni 1-x Pd x Si solid solution is formed, which in turn postpones the NiSi 2 formation to a higher temperature due to entropy of mixing. Our findings highlight the overall importance of the interface energy for nucleation in ternary systems. V C 2013 AIP Publishing LLC.

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“…The French group observed that for 50 nm Ni(5% Pt) films on Si(001) that were subjected to an isothermal anneal at 300 C and quenched during the early growth of the Ni 1Àx Pt x Si seeds (i.e., before the total consumption of the Ni(Pt) layer), the Pt shows a very non-uniform lateral distribution. 158 It was found that only a limited amount of Pt is incorporated in the Ni 1Àx Pt x Si grains, as the majority is located at the Ni 1Àx Pt x Si grain boundaries and at the Ni 1Àx Pt x Si/Ni 2 Si interface, while very little Pt is measured at the Ni 1Àx Pt x Si/Si interface. For films with !10% of Pt annealed using isothermals or very slow ramp anneals, the non-stoichiometric h-phase was found to form epitaxially on Si(001) (instead of d-Ni 2 Si).…”

Section: B Lattice Spacing Of the Substratementioning

confidence: 99%