Texture in thin film silicides and germanides: A review

Schutter, Bob De; Keyser, K. De; Lavoie, C.; Detavernier, Christophe

doi:10.1063/1.4960122

Cited by 32 publications

(27 citation statements)

References 162 publications

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“…Experimentally it is more difficult to grow epitaxial germanides on Ge 32 – 36 . This is partly because of missing phases in the phase diagrams of bulk germanides 35 and partly because of poor texture control and micro-crystallinity, which makes their Schottky barriers inhomogeneous and shifts the barrier size. Thus there are fewer well behaved epitaxial Ge/germanide systems for growth 33 , 34 .…”

Section: Resultsmentioning

confidence: 99%

Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge

Guo

Robertson

2017

Sci Rep

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Density functional supercell calculations of the Schottky barrier heights (SBH) of metal germanides and silicides on Si or Ge find that these vary with the facet, unlike those of elemental metals. In addition, silicides and germanides show a stronger dependence of their SBHs on the work function than those of elemental metals, as seen experimentally. Both effects are beyond the standard metal induced gap states model. NiSi2 is found to have a much lower SBH on n-Si(100) than on n-Si(111), as seen experimentally. It is shown how such results can be used to design lower SBH contacts for n-Ge, which are needed technologically. The SBHs of the better behaved Si/silicide interfaces can be used to benchmark the behavior of the less well behaved Ge-germanide interfaces for this purpose. The dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is also covered.

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Section: Resultsmentioning

confidence: 99%

Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge

Guo

Robertson

2017

Sci Rep

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“…Further details concerning the set-up used for these pole-figure measurements can be found in our earlier work[15,16]. The extensive literature available on silicide and germanide textures was recently reviewed by De Schutter et al[17].…”

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confidence: 99%

Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

Geenen

Stiphout

Nanakoudis

et al. 2018

Journal of Applied Physics

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The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. However, the solid-state reaction between as-deposited Ni and the Si substrate exhibits a peculiar change for as-deposited Ni films thinner than a critical thickness of t c =5 nm. Whereas thicker films form polycrystalline NiSi upon annealing above 450 • C, thinner films form epitaxial NiSi 2 films which exhibit a high resistance towards agglomeration. For industrial applications, it is therefore of utmost importance to assess the critical thickness with high certainty and find novel methodologies to either increase or decrease its value, depending on the aimed silicide formation. This paper investigates Ni films between 0 and 15 nm initial thickness by using of 'thickness gradients', which provide semi-continuous information on silicide formation and stability as a function of as-deposited layer thickness. The alloying of these Ni layers with 10 % Al, Co, Ge, Pd or Pt renders a significant change in the phase sequence as a function of thickness and dependent on the alloying element. The addition of these ternary impurities therefore change the critical thickness t c. The results are discussed in the framework of

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“…Up to now, the axiotaxy texture has been observed in different materials mainly based on thin films of semiconductors such as in silicide/silicon, germanide/germanium interfaces investigated in previous works [2,3,4,5,6,7,8,9,10,11,12]. Interested readers are referred to the recent review papers by De Schutter et al [13,14]. This texture was also observed in MnP nanoclusters present in GaP thin films [15].…”

Section: Introductionmentioning

confidence: 81%

Axiotaxy in oxide heterostructures: Preferential orientation of BaCeO3 nanoparticles embedded in superconducting YBa2Cu3O7− thin films

et al. 2017

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Texture in thin film silicides and germanides: A review

Cited by 32 publications

References 162 publications

Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge

Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge

Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

Axiotaxy in oxide heterostructures: Preferential orientation of BaCeO3 nanoparticles embedded in superconducting YBa2Cu3O7− thin films

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