Three-channel 77 GHz automotive radar transmitter in plastic package

Knapp, H.; Treml, M.; Schinko, Andreas; Kolmhofer, Erich; Matzinger, S.; Strasser, Georg; Lachner, Rudolf; Maurer, Linus; Minichshofer, Jurgen

doi:10.1109/rfic.2012.6242245

Cited by 49 publications

(20 citation statements)

References 7 publications

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“…State of the art RF transceivers with diode-based power detectors like the one described in [5] and [6] need an initial calibration for absolute power level monitoring. The output power has to be measured with an external RF power sensor while monitoring the diode-based power detector voltage.…”

Section: Calibration Methodsmentioning

confidence: 99%

A true-RMS integrated power sensor for on-chip calibration

Wursthorn

Knapp

Aufinger

et al. 2014

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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An on-chip RF power sensor based on the bolometer principle is presented in this work. The sensor can be used for transmitter calibration purposes without using any RF equipment offering time and cost savings. Investigations on various layers of the fT =170 GHz SiGe bipolar technology, which is used in this work, are performed and evaluated. Especially silicided polysilicon layers show a promising behavior as bolometer.Measurements on a 76 GHz transmitter chip are performed to point out the feasibility of the on-chip absolute RF power sensor. The results show that this novel sensor concept is well suited for on-chip self-calibration.

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Section: Calibration Methodsmentioning

confidence: 99%

A true-RMS integrated power sensor for on-chip calibration

Wursthorn

Knapp

Aufinger

et al. 2014

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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“…As final result a three channel 77 GHz transmitter and a four channel receiver have been qualified as first packaged radar products in 2012 [6,7]. Fig.…”

Section: Embedded Wafer Level Ball Grid Array (Ewlb) Packaging Tmentioning

confidence: 96%

SiGe BiCMOS and eWLB packaging technologies for automotive radar solutions

Böck

Lachner

2015

2015 IEEE MTT-S International Conference on Microwaves for Intelligent Mobility (ICMIM)

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In this paper the evolution of silicon based automotive radar for the 76-81 GHz range is described. Starting with SiGe bare-die chips in 2009, today packaged MMICs are available for low-cost radar applications. Future SiGe BiCMOS technology will enable highly integrated single chip radars with superior performance at lower power consumption. This will pave the way for automotive radar safety for everyone and will be an important step towards autonomous driving.

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“…Industrial research strongly focused on bringing the costs of the technology down in recent years, see e.g. rfpackages in [24] and SiGe-technology for automotive MMICs [25,26]. Concerning the MMIC CMOS and SiGe (BiCMOS) are candidates for future automotive radars, even in the frequency range at 158 GHz, see e.g.…”

Section: Doppler Signaturesmentioning

confidence: 99%

“…On the other hand there are some hints that there might be limits on CMOS for automotive MMIC as shown in [31]. Concerning packaging, many different approaches are under investigation or are already in use [25,26], again even up to 170 GHz, see [32].…”

Section: Doppler Signaturesmentioning

confidence: 99%