Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors

Fahem, Zied; Bauhofer, W.

doi:10.1016/j.mee.2012.12.022

Cited by 11 publications

(11 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Later, the same author utilized a thiol−ene cross-linking reaction, which exhibited negligible sensitivity to O 2 inhibition (from air). 285 However, no electrical or dielectric properties of these films were reported. Ko et al further improved the dielectric properties of thiol− ene cross-linked films by using triazine−enes and multithiols, which enable a high cross-linking efficiency.…”

Section: Polymer Dielectricsmentioning

confidence: 99%

“…The cured films exhibit a dielectric constant of 3.8–5.1 with a low current density of 10 –9 –10 –10 A cm –2 at 1 MV cm –1 (Figure b). Later, the same author utilized a thiol–ene cross-linking reaction, which exhibited negligible sensitivity to O 2 inhibition (from air) . However, no electrical or dielectric properties of these films were reported.…”

Section: High-k Dielectric Materialsmentioning

confidence: 99%

See 1 more Smart Citation

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

et al. 2018

View full text Add to dashboard Cite

Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

show abstract

Section: Polymer Dielectricsmentioning

confidence: 99%

Section: High-k Dielectric Materialsmentioning

confidence: 99%

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

et al. 2018

View full text Add to dashboard Cite

show abstract

“…However, high solid-state temperature and complex manufacturing process limit their applications in the miniaturized transistors, large area flexible displays, and large-scale integrated circuits. [172] Substitution of inorganic insulators by polymer/BaTiO3 with high dielectric constant is the inevitable trend of OFET development.…”

Section: Organic Field-effect Transistormentioning

confidence: 99%

Recent development on modification of synthesized barium titanate (BaTiO3) and polymer/BaTiO3 dielectric composites

Zhang

2018

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

 Users may download and print one copy of any publication from the public portal for the purpose of private study or research.  You may not further distribute the material or use it for any profit-making activity or commercial gain  You may freely distribute the URL identifying the publication in the public portal If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.

show abstract

“…PAPER been used in possible new applications. 24,25 In this paper, we report the in situ photopolymerization of a thiol-ene system containing multifunctional enes including triazine units and multithiol compounds. The photopolymerized thiol-ene system can be used to obtain electrically and thermally stable dielectric layers.…”

Section: Journal Of Materials Chemistry Cmentioning

confidence: 99%

Electrically and thermally stable gate dielectrics from thiol–ene cross-linked systems for use in organic thin-film transistors

Kang

Lee

et al. 2013

J. Mater. Chem. C

View full text Add to dashboard Cite

Novel solution-processable thiol-ene gate dielectrics for use in organic thin-film transistors (OTFTs) have been designed and fabricated in this study. Incorporation of UV-sensitive functional groups in the thiolene system affords electrical and thermal stability to the gate dielectric layers by a simple photocuring method. The very smooth thiol-ene gate dielectric layer exhibits excellent insulating properties (leakage current densities $10 À7 to 10 À8 A cm À2 at 2 MV cm À1 ) and a relatively high dielectric constant (>5) with high environmental stability. Furthermore, the electrical properties of this gate dielectric layer are stable up to 300 C and show no changes even when the dielectric is kept for 100 days in air; this stability can be attributed to the densely cross-linked structure of the thiol-ene layer. OTFTs utilizing the thiol-ene gate dielectrics with various organic semiconductors show enhanced TFT performances; in particular, they show no hysteresis without a threshold-voltage shift. These observations are in contrast to those for a representative organic gate dielectric polymer, cross-linked poly(4-vinylphenol).

show abstract

Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors

Cited by 11 publications

References 11 publications

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

High-kGate Dielectrics for Emerging Flexible and Stretchable Electronics

Recent development on modification of synthesized barium titanate (BaTiO3) and polymer/BaTiO3 dielectric composites

Electrically and thermally stable gate dielectrics from thiol–ene cross-linked systems for use in organic thin-film transistors

Contact Info

Product

Resources

About