Electrically and thermally stable gate dielectrics from thiol–ene cross-linked systems for use in organic thin-film transistors

Ko, Jung Min; Kang, Young Hun; Lee, Changjin; Cho, Song Yun

doi:10.1039/c3tc30297k

Cited by 37 publications

(32 citation statements)

References 32 publications

(23 reference statements)

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“…[ 9,10 ] In parallel, the development of suitable gate dielectric materials has also led to intense research, as this is another critical component of the OTFTs to fully realize their potential. [11][12][13] The importance to develop process compatible gate dielectric materials is critical to demonstrate the wide applicability of OTFT devices, and the lack of a suitable process compatible, high quality dielectric limits the OTFTs' practical applications. In addition to developing new materials and processes, it is also an important strategy to take advantage of existing well-established process infrastructures, in order to accelerate the development of organic electronics.…”

Section: Doi: 101002/aelm201500374mentioning

confidence: 99%

Room Temperature Grown High‐Quality Polymer‐Like Carbon Gate Dielectric for Organic Thin‐Film Transistors

Feng

Anguita

Tang

et al. 2016

Adv Elect Materials

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from the plasma decomposition of hydrocarbons are known to produce temperature stable materials even when grown at room temperature [ 18 ] which compares to equivalent siliconceramic materials deposited from silane precursors, which require signifi cantly higher deposition temperatures. It is believed that when using hydrocarbons, the plasma is able to provide the carbon radicals with suffi cient electronic excitation energy, to allow the growth of high quality material despite the use of signifi cantly lower growth temperatures, [ 19 ] such as room temperature in this study. The materials formed are stable, and offer functionalities that have wide applicability. In this work, we use this ability to prove the deposition of PLC dielectric fi lms with suffi ciently low defect densities that enable their use for high-quality and electronic-grade gate dielectric layers, even when deposited at room temperature. This low-cost and toxicfree PLC material shows outstanding surface and electrical characteristics, highly suitable for electronic devices. We report for the fi rst time PLC material used as the gate dielectric layer in OTFTs with solution-processed organic semiconductor. The fabricated bottom-gate bottom-contact OTFTs with PLC dielectric present promising overall performance. The capability of PLC for room temperature deposition by well-established and industry-standard PECVD techniques renders it a highly promising gate dielectric material for wide implementation in plastic electronics.The schematic diagram of the PECVD process for PLC dielectric is shown in Figure 1 ; a water-cooling system was used to maintain the substrate at room temperature. We have considered both physical and chemical effects from the plasma on the dielectric, in order to determine the conditions for minimal plasma damage. From a physical perspective, we minimize ion-induced damage by placing the substrates on the earthed electrode of a capacitively coupled RF plasma. We also operate in a relatively high-pressure regime of 900 mTorr, where the mean free path (<<1 mm) is signifi cantly shorter than the electrode separation (8 cm).

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Section: Doi: 101002/aelm201500374mentioning

confidence: 99%

Room Temperature Grown High‐Quality Polymer‐Like Carbon Gate Dielectric for Organic Thin‐Film Transistors

Feng

Anguita

Tang

et al. 2016

Adv Elect Materials

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“…Currently, organic thin film transistors (OTFTs) have been significantly investigated due to their unique advantages, including solution fabrication, light weight, and large‐area coverage . Surface roughness, surface energy, and film geometry in the interface between semiconductor and dielectric have been regarded as key factors that strongly influence the current density along the channel of transistor . Cross‐linked poly(4‐vinylphenol) (PVP) is one of the most widely used polymer dielectric materials as the gate dielectric layer in organic field effect transistors (OFETs), which has been extensively studied for the remarkable characteristic of complementary solubility, high dielectric constant, and smooth surface .…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, to the IPN membranes, increasing the cross‐linking density can minimize permeability of oxygen or small organic molecule into the membranes . It has been reported that the cross‐linking process between PVP and the cross‐linker could cause nondense net structure of dielectric and pinhole films, which could result in high leakage currents and rough surface . In this work, to enhance the insulating property and eliminate pinholes of the cross‐linked PVP films, we employed liquid monomers that infuse into network of PVP films to create an IPN after photopolymerizatoin.…”

Section: Introductionmentioning

confidence: 99%

Surface Infused Interpenetrating Network as Gate Dielectric for High Performance Thin Film Transistors

Han

Zhang

et al. 2017

Macro Materials & Eng

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An effectively novel surface infusion method is proposed and employed as a modification process of insulator to simultaneously improve surface morphology and densification of dielectric layers in an organic filed effect transistor. The process involves two steps: infusion of liquid monomers into the cross‐linked poly(4‐vinylphenol) films and photopolymerization to form interpenetrating polymer network (IPN) within the surface. The modified films exhibit excellent insulating properties with smooth surface, high densification, and low leakage current. Moreover, the improved dielectric surface with infused IPN results in a better semiconducting polymer ordering, which facilitates charge transport. In correlation to device performance, it shows that the charge mobility improves from 0.24 to 1.60 cm2 V−1 s−1 along with improved threshold voltage and on/off ratio. This novel method can be broadly applicable to the simple optimization of polymeric gate dielectric for the further improvement of organic thin film transistors.

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“…Moreover, the interference of each dielectric in the multilayer structure can be solved through the cross-link process. Commonly, the cross-linking in the dielectric layer can be achieved by photo or thermal reactions [33][34][35].…”

Section: Cross-linked Polymer Dielectricmentioning

confidence: 99%

Polymer Dielectric in Organic Field‐Effect Transistor

Shi¹,

Zheng²,

Yu³

2017

Properties and Applications of Polymer Dielectrics

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In this chapter, we aim to present an overview of the polymer dielectrics in organic fieldeffect transistors and their applications. In the first section, we give a short introduction of polymer dielectrics in organic field-effect transistors. We illustrate multilayer, hybrid, and cross-linked polymer dielectrics adopted in organic field-effect transistors. Then we introduce the available biomaterials engaged as polymer dielectrics in organic fieldeffect transistors. We mainly focus on the utilization of silk fibroin, DNA, and DNA base pair dielectrics. We end the chapter by presenting the applications of polymer dielectrics. We elaborate that the polymer dielectrics can function as the electrode buffer layer, as well as the organic field-effect transistor-based gas sensor, inverter, and memory.

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Electrically and thermally stable gate dielectrics from thiol–ene cross-linked systems for use in organic thin-film transistors

Cited by 37 publications

References 32 publications

Room Temperature Grown High‐Quality Polymer‐Like Carbon Gate Dielectric for Organic Thin‐Film Transistors

Room Temperature Grown High‐Quality Polymer‐Like Carbon Gate Dielectric for Organic Thin‐Film Transistors

Surface Infused Interpenetrating Network as Gate Dielectric for High Performance Thin Film Transistors

Polymer Dielectric in Organic Field‐Effect Transistor

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