Surface Infused Interpenetrating Network as Gate Dielectric for High Performance Thin Film Transistors

Abstract

An effectively novel surface infusion method is proposed and employed as a modification process of insulator to simultaneously improve surface morphology and densification of dielectric layers in an organic filed effect transistor. The process involves two steps: infusion of liquid monomers into the cross‐linked poly(4‐vinylphenol) films and photopolymerization to form interpenetrating polymer network (IPN) within the surface. The modified films exhibit excellent insulating properties with smooth surface, high densification, and low leakage current. Moreover, the improved dielectric surface with infused IPN results in a better semiconducting polymer ordering, which facilitates charge transport. In correlation to device performance, it shows that the charge mobility improves from 0.24 to 1.60 cm2 V−1 s−1 along with improved threshold voltage and on/off ratio. This novel method can be broadly applicable to the simple optimization of polymeric gate dielectric for the further improvement of organic thin film transistors.

In Situ Synthesis of Conducting Polymers: A Novel Approach toward Polymer Thermoelectrics

“…This in situ polymerization reaction is very fast and straightforward and shows compatibility with industrial large-area printing techniques (i.e., roll to roll deposition techniques) to obtain thin flexible films. − For instance, the in situ oxidative polymerization of terthiophene (3T) with Cu­(ClO 4 ) 2 ) inside a novolac-based negative tone photoresist was successfully carried out to combine the high conductivity of polythiophenes with the lithographic characteristics of novolac. IPNs with electrical conducting properties is a promising material to fabricate organic microelectronic, optoelectronic, field-effect transistors, among others. − …”