1993
DOI: 10.1016/0026-2692(93)90052-g
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Thin oxide nitridation in N2O by RTP for non-volatile memories

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Cited by 7 publications
(2 citation statements)
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“…A number of experimental results on the growth kinetics for oxidation in N20 have appeared in the literature [ 171- [21]. These results involve different oxidation times (from few seconds to 120 m ), different oxidation temperatures (from 885°C to 12OO0C), different pressures of the oxidizing gas (1 atm and 500 torr), and different initial oxide thicknesses (up to 15 nm).…”
Section: Experimental Results and Model Parameter Extractionmentioning
confidence: 99%
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“…A number of experimental results on the growth kinetics for oxidation in N20 have appeared in the literature [ 171- [21]. These results involve different oxidation times (from few seconds to 120 m ), different oxidation temperatures (from 885°C to 12OO0C), different pressures of the oxidizing gas (1 atm and 500 torr), and different initial oxide thicknesses (up to 15 nm).…”
Section: Experimental Results and Model Parameter Extractionmentioning
confidence: 99%
“…The first term in (21) is identical to the first, so-called linear rate term of (1 1). The only difference is in the second, so-called initial rate term, in that e-r/xa used in TMA SUPREM-3 appears as in (21). At first glance there appears to be no advantage in using the term e&/' instead of the term as the longer oxidation time t corresponds to a larger oxide thickness 2 .…”
Section: Expression For the Concentration Of Growth Sitesmentioning
confidence: 99%