Extension of the Deal-Grove oxidation model to include the effects of nitrogen

Dimitrijev, Sima; Harrison, H.B.; Sweatman, Denis Russell

doi:10.1109/16.481727

Cited by 21 publications

(5 citation statements)

References 19 publications

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“…Complete slow-trap characterization is beyond the scope of this letter and is presented elsewhere. 16 Nevertheless, we present the main results from the slow-trap characterization in Table I to show that there is a good correlation with the interface trap measurements.…”

Section: ͓S0003-6951͑97͒04415-x͔mentioning

confidence: 63%

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Dimitrijev

Harrison

et al. 1997

Applied Physics Letters

315

137

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Interfacial characteristics of Al/SiO2/n-type 6H–SiC metal–oxide–semiconductor capacitors fabricated by rapid thermal processing (RTP) with N2O and NO annealing are investigated. Interface state density was measured by a conductance technique at room temperature. RTP oxidation in pure O2 leads to an excellent SiO2/n-type 6H–SiC interface with interface state density in the order of 1010–1011 eV−1 cm−2. NO annealing improves the SiO2/n-type 6H–SiC interface, while N2O annealing increases the interface state density.

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Section: ͓S0003-6951͑97͒04415-x͔mentioning

confidence: 63%

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Dimitrijev

Harrison

et al. 1997

Applied Physics Letters

315

137

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“…However, and opposite of what was found at the interface, the Si-N bonds are weaker than the Si-O ones inside the bulk of the oxide. 34 By species generation-recombination processes in the growing oxide, liberated nitrogen atoms are then progressively replaced by oxygen atoms. The released nitrogen species outdiffuse far from the interface or rapidly recombine with other diffusing species.…”

Section: Resultsmentioning

confidence: 99%

Effects of Photons on 4H-SiC Rapid Thermal Oxidation Using Nitrous Oxide Gas

Constant

Camara

Godignon

et al. 2010

J. Electrochem. Soc.

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Rapid thermal processing (RTP) has been evaluated as an alternative to conventional furnace technique for oxynitridation of 4H-SiC. Nitrous oxide (normalN2O) under atmospheric pressure conditions was used as oxidizing gas. The beneficial effect of high energy photons, coming from the RTP halogen lamps, leads to an enhancement of the normalN2O molecule dissociation and an augmentation of the diffusion rate of dissociated species in the growing oxide. Compared to classical normalN2O oxidation, the net effect is not only to increase the growth rate but also to result in dielectrics that exhibit a reduced trapped charge, a more stable oxide/4H-SiC overall structure, and a better (less defective) interface. Further optimization, combined with a better understanding of the normalN2O rapid thermal oxidation process, should provide new issues for the growth of gate oxides in the SiC microelectronic industry.

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“…Annealing in NO and N O appear to be the two most promising techniques. While both techniques lead to incorporation of nitrogen at the interface, the annealing in N O leads to new oxide growth [7], as opposed to the annealing in NO which nitrides the interface with virtually no new oxide growth [8]- [11]. The nitrogen accumulation at the interface is related to observed improvements of the electrical characteristics of oxide/silicon interface [8]- [14].…”

Section: Si Background Sic Results and Discussionmentioning

confidence: 99%

Nitridation of silicon-dioxide films grown on 6H silicon carbide

Dimitrijev

Harrison

et al. 1997

IEEE Electron Device Lett.

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Abstract-This letter addresses the question of why it is possible to grow high-quality oxide films on N-type but not on P-type SiC. It provides results which indicate that the oxide/SiC interface would be inferior to the oxide/Si interface for both, N-type and P-type SiC, if it were not for the beneficial effects of nitrogen incorporation. The letter presents, for the first time, results on nitridation of thermally grown oxides in NO and N2O. The results demonstrate that the oxides grown on P-type can be improved by NO annealing, but not by N2O annealing.

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Extension of the Deal-Grove oxidation model to include the effects of nitrogen

Cited by 21 publications

References 19 publications

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Effects of Photons on 4H-SiC Rapid Thermal Oxidation Using Nitrous Oxide Gas

Nitridation of silicon-dioxide films grown on 6H silicon carbide

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