Electrical characterization of rapid thermal annealed radio frequency sputtered silicon oxide films Thin silicon dioxide films nitrided in N 2 O by rapid thermal processing ͑RTP͒ or in a classical furnace were investigated by x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and electrical measurements on metal-oxide-semiconductor capacitors. Differences between the two nitridation processes were observed and explained. In lightly nitrided films, nitrogen occupies two configurations. Nitrogen is bound to three silicon atoms with at least one in the substrate or all three in the oxide. In RTP-nitrided films, both of these species are confined to within 1.5 nm of the Si/SiO 2 interface. In furnace-nitrided films, the first species is also located close to the interface whereas the second one fills most of the regrown oxide thickness. In furnace-grown films, which are more heavily nitrided, a third structure due to Si 2 vN-O is observed throughout the layer. The electrical characteristics are well correlated with the amount of nitrogen at the interface that is bound to Si atoms in the substrate.
Optical absorption spectra of as-grown and neutron-irradiated amorphous SiO2, both fused natural quartz and synthetic silica, have been analysed in the ultraviolet region below the fundamental edge. The description of the optical spectrum has been further clarified by a detailed study of the spectral components as a function of the neutron irradiation in different types of silica, we have verified known correlations between optical bands and between bands and p m a g n e t i c centres. In 'as-gown' fused quartz samples, a previously unreported band at 6.2 eV has been detected. 'As-grown' synthetic silicas do not show any band, up to the intrinsic absorption edge. In the irradiated samples, the experimental results suggest a correlation between two bands at 5.8 and 7.1 eV. while previous amibution of the bands at 5.0 eV (B2 band) and 7.6 eV (E band) to the Same defect is discussed. The role of impurities in the optical absorption and in the radiation hardness is also mnsidered.
A detailed study of the ZnIn2S4 photoluminescence in the temperature range 10 to 450 K is presented; the emission spectra consist of a single, wide and asymmetrical band centered, for T = 80 K, at 1.6 to 1.8 eV. The temperature dependence of its peak energy and of its halfwidth shows an unusual behaviour. The emission band shifts towards lower energies when the excitation intensity decreases; in time resolved spectra, a red shift is also observed when the delay time after the end of the pulsed excitation increases. It is shown that these trends, typical of heavily doped semiconductors, can be interpreted only assuming that ZnIn2S4 has a “quasi disordered” nature; this characteristic of ZnIn2S4 is also suggested by the analysis of its optical, electrical, and photoelectronic properties. Finally, a semiempirical model allowing a satisfactory fit of the emission band shape is presented.
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