Thin multicrystalline silicon solar cells with silicon nitride front and rear surface passivation

Mittelstädt, L.; Metz, A.; Hezel, Rudolf

doi:10.1109/pvsc.2002.1190482

Cited by 2 publications

(1 citation statement)

References 4 publications

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“…The performance of mc-Si solar cells could increase or decrease when the wafer thickness is reduced depending on the values of device parameters such as bulk lifetime and back surface recombination velocity (S r ) [6,7]. An improvement in V oc when decreasing the thickness can be observed if S r on the back of the p-type wafer is kept below a critical value given by S r,cr = D/L (D: Diffusion constant for minority carriers, L = diffusion length of minority carriers in the base region) as is evident from equation 1, where J ob (dark saturation current of base) increases for values greater than S r,cr .…”

Section: Effect Of Reducing the Wafer Thickness On The Performance Of...mentioning

confidence: 99%

Investigation of the Effect of Resistivity and Thickness on the Performance of Cast Multicrystalline Silicon Solar Cells

Sheoran

Upadhyaya

Rounsaville

et al. 2006

2006 IEEE 4th World Conference on Photovoltaic Energy Conference

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A low resistivity of 0.2-0.3 Ω.cm has been shown to be optimum for high quality single crystal silicon for solar cells. However, for lower quality cast mc-Si, this optimum resistivity increases owing to a dopant-defect interaction, which reduces the bulk lifetime at lower resistivities. In this study, solar cells fabricated on 225 µm thick cast multicrystalline silicon wafers showed very little or no enhancement in efficiency with the decrease in resistivity. However, V oc enhancement was observed for the lower resistivity cells despite significantly lower bulk lifetimes compared to higher resistivity cells. After gettering (during P diffusion) and hydrogenation (from SiN x ) steps used in cell fabrication, the bulk lifetime in 225 µm thick wafers from the middle of the ingot decreased from 253 µs to 135 µs when the resistivity was lowered from 1.5 Ω.cm to 0.6 Ω.cm. This paper shows that solar cells fabricated on 175 µm thick, 1.5 Ω.cm, wafers showed no appreciable loss in the cell performance when compared to the 225 µm thick cells, consistent with PC1D modeling.

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Section: Effect Of Reducing the Wafer Thickness On The Performance Of...mentioning

confidence: 99%

Investigation of the Effect of Resistivity and Thickness on the Performance of Cast Multicrystalline Silicon Solar Cells

Sheoran

Upadhyaya

Rounsaville

et al. 2006

2006 IEEE 4th World Conference on Photovoltaic Energy Conference

View full text Add to dashboard Cite

show abstract

Determination of effective diffusion length and saturation current density in silicon solar cells

Zhu¹,

Shen²,

Zhang³

et al. 2005

Physica B: Condensed Matter

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Thin multicrystalline silicon solar cells with silicon nitride front and rear surface passivation

Cited by 2 publications

References 4 publications

Investigation of the Effect of Resistivity and Thickness on the Performance of Cast Multicrystalline Silicon Solar Cells

Investigation of the Effect of Resistivity and Thickness on the Performance of Cast Multicrystalline Silicon Solar Cells

Determination of effective diffusion length and saturation current density in silicon solar cells

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