2005
DOI: 10.1016/j.physb.2004.11.069
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Determination of effective diffusion length and saturation current density in silicon solar cells

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Cited by 16 publications
(6 citation statements)
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“…The primary challenges associated with screen‐printed CZ bifacial solar cells are the BBr 3 boron diffusion, boron‐diffused surface passivation, and metallization. It is known that junction depth, surface carrier concentration, sheet resistance, and diffusion uniformity control the dark saturation current density J 0 and the effective lifetime in silicon solar cells 10. As part of this work boron diffusion conditions have been tailored in order to achieve critical cell physical parameters necessary for bifacial operation.…”
Section: Introductionmentioning
confidence: 99%
“…The primary challenges associated with screen‐printed CZ bifacial solar cells are the BBr 3 boron diffusion, boron‐diffused surface passivation, and metallization. It is known that junction depth, surface carrier concentration, sheet resistance, and diffusion uniformity control the dark saturation current density J 0 and the effective lifetime in silicon solar cells 10. As part of this work boron diffusion conditions have been tailored in order to achieve critical cell physical parameters necessary for bifacial operation.…”
Section: Introductionmentioning
confidence: 99%
“…Accurate measurements of transport properties are therefore a major issue that still requires some improvements. In particular, the minority carrier diffusion length is one of the most important parameters affecting the solar cell performance that can be evaluated by light beam induced current (LBIC) and electron beam induced current (EBIC) in starting materials [5,6], or from internal quantum efficiency (IQE) [7][8][9] and I-V [10,11] silicon layers deposited on 2 in. substrates has permitted the fabrication of solar cells with a conversion efficiency Á = 9.5% [12].…”
Section: Introductionmentioning
confidence: 99%
“…At all wavelengths, the Voc decreased at the rate of 1.79 mV/℃. As the temperature rise, the intrinsic carrier density in the light absorption layer increase which resulted in excessive recombination current densities, and it may have led to a drop in the Voc [27][28][29]. As it can be seen that the Isc is almost independent on temperature.…”
Section: Power Generation Characteristics Of Si Pv Cellmentioning
confidence: 99%