We report results obtained using an innovative approach for the fabrication of bifacial low-concentrator thin Ag-free n-type Cz-Si (Czochralski silicon) solar cells based on an indium tin oxide/(p + nn + )Cz-Si/indium fluorine oxide structure. The (p + nn + )Cz-Si structure was produced by boron and phosphorus diffusion from B-and P-containing glasses deposited on the opposite sides of n-type Cz-Si wafers, followed by an etch-back step. Transparent conducting oxide (TCO) films, acting as antireflection electrodes, were deposited by ultrasonic spray pyrolysis on both sides. A copper wire contact pattern was attached by low-temperature (160°C) lamination simultaneously to the front and rear transparent conducting oxide layers as well as to the interconnecting ribbons located outside the structure. The shadowing from the contacts was~4%. The resulting solar cells, 25 × 25 mm 2 in dimensions, showed front/rear efficiencies of 17.6-17.9%/16.7-17.0%, respectively, at one to three suns (bifaciality of~95%). Even at one-sun front illumination and 20-50% one-sun rear illumination, such a cell will generate energy approaching that produced by a monofacial solar cell of 21-26% efficiency.