Thin films of VO2 on glass by atomic layer deposition: microstructure and electrical properties

Dagur, Pritesh; Mane, Anil U.; Shivashankar, S. A.

doi:10.1016/j.jcrysgro.2004.11.144

Cited by 43 publications

(46 citation statements)

References 19 publications

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“…More recently, high‐quality Nb 2 O 5 thin films were grown from (Et 2 N) 3 Nb = N t Bu and (EtMeN) 3 Nb = N t Bu with either water or ozone as the oxygen source . A wide temperature range of constant GPC, between 175 and 325°C, was found for these precursors, regardless of the oxygen source (Fig.…”

Section: Ald Of Groups 4 and 5 Oxide Thin Filmsmentioning

confidence: 99%

“…Niobium oxide is the only oxide from the group 4 and 5 that has been deposited from an alkoxide‐imide precursor. The precursor ( t BuO) 3 Nb = N t amyl was found to have poor thermal stability and did not undergo self‐limiting growth at any deposition temperature . Because of its poor thermal stability, ( t BuO) 3 Nb = N t amyl thermal decomposition contributed significantly to the film growth and resulted in high thickness non‐uniformity, high surface roughness, and high impurity levels.…”

Section: Ald Of Groups 4 and 5 Oxide Thin Filmsmentioning

confidence: 99%

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Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

Blanquart

Niinistö

Ritala

et al. 2014

Chemical Vapor Deposition

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The atomic layer deposition (ALD) process, an alternative to CVD, is universally appreciated for its unique advantages such as excellent repeatability, conformity, and thickness control at the atomic level. ALD precursor chemistry has mainly been based on homoleptic compounds such as, but not limited to, metal halides, alkylamides, and alkoxides, however these precursors have drawbacks such as possible halide contamination and low thermal stabilities in the case of the alkylamides and alkoxides. Consequently, heteroleptic precursors have been investigated as alternatives to the existing homoleptic counterparts, leading to the development of several advantageous processes. Nevertheless, there is no thematic review dedicated to the heteroleptic precursors and their properties, and it seems that no coherent strategy has been adopted for the development of heteroleptic precursors. This review gives a brief description of ALD and presents studies on the deposition of thin films of groups 4 and 5 metal oxides using ALD. A description of the general ALD properties of homoleptic precursors, in addition to a review on the thermal ALD of groups 4 and 5 metal oxides from heteroleptic precursors, is provided. Trends in the properties of heteroleptic ALD precursors, based on the literature review and recent experimental data, are discussed.

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Section: Ald Of Groups 4 and 5 Oxide Thin Filmsmentioning

confidence: 99%

Section: Ald Of Groups 4 and 5 Oxide Thin Filmsmentioning

confidence: 99%

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

Blanquart

Niinistö

Ritala

et al. 2014

Chemical Vapor Deposition

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“…• vacuum deposition techniques including plasma-enhanced chemical vapour deposition (PECVD) [20], • pulsed laser deposition [21], • thermal evaporation technique [22], • atomic layer deposition [23], • reactive magnetron sputtering [24][25][26], • rf sputtering deposition [27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Structural And Optical Properties Of VOx Thin Films

Schneider

2015

Archives of Metallurgy and Materials

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VO x thin films were deposited on Corning glass, fused silica and Ti foils by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. Influence of the oxygen partial pressure in the sputtering chamber on the structural and optical properties of thin films has been investigated.Structural properties of as-sputtered thin films were studied by X-ray diffraction at glancing incidence, GIXD. Optical transmittance and reflectance spectra were recordedwith a Lambda 19 Perkin-Elmer double spectrophotometer. Thickness of the films was determined from the profilometry. It has been confirmed by XRD that the deposited films are composed mainly of V 2 O 5 phase. The estimated optical band gap of 2.5 eV corresponds to V 2 O 5 .Keywords: VO x thin films, reactive sputtering, microstructure, optical properties, energy band gap Cienkie warstwy VO x były nanoszone na szkło Corning metodą rozpylania magnetronowego rf. Jako katody użyto metalicznego wanadu. Były one nanoszone w komorze wypełnionej mieszaniną argonu i tlenu w różnych proporcjach przy ustalonych przepływach. Zbadano wpływ ciśnienia parcjalnego tlenu w komorze na własności strukturalne i optyczne otrzymanych warstw.Własności strukturalne cienkich warstw zostały określone metodą rozpraszania promieniowania rentgenowskiego padają-cego pod małymi kątami (GIXD). Widma optyczne transmitancji i odbicia zostały wykonane przy użyciu spektrometru Lambda 19 Perkin-Elmer. Grubość badanych warstw zmierzono za pomocą profilometru.Pomiary XRD potwierdziły, że otrzymane warstwy składają się głównie z fazy V 2 O 5 . Wyznaczona optycznie przerwa energetyczna wynosząca 2.5 eV odpowiada przerwie energetycznej V 2 O 5 .

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“…The material obtained was shown by x-ray diffraction to be impure with a high content of V 2 O 5 and other sub-oxides indicative of too low a growth temperature [34]. However, infiltration was observed to be uniform and a thermochromic shift was observed in the position of the Bragg peak of the photonic crystal.…”

Section: B Vanadium Dioxide Ald Growth Within a Photonic Crystal Hostmentioning

confidence: 95%

Developments in the Understanding of ALD Processes and Applications of ALD in Critical Technologies

2007

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In part one of this paper, a new approach to the in-situ study of ALD growth processes and mechanisms, involving the use of near-IR diode lasers is outlined and some preliminary results for the detection of short (10-20 ms) pulses of reactive gases introduced into the reactor under ALD-growth conditions is described. How this information is likely to improve our understanding of ALD processes and lead to the growth of new or improved materials is outlined. In part two of this paper the use of atomic layer deposition (ALD) processes for the production of new photonic bandgap materials via the infilling of colloidal photonic crystals is described giving examples for the growth of Al 2 O 3 and VO 2 . For this latter material, we present the first example of a photonic crystal that displays clear thermochromic behaviour.

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Thin films of VO2 on glass by atomic layer deposition: microstructure and electrical properties

Cited by 43 publications

References 19 publications

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

Structural And Optical Properties Of VOx Thin Films

Developments in the Understanding of ALD Processes and Applications of ALD in Critical Technologies

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