Thin films of thermoelectric compound Mg2Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

Deposition of thin films of Mg2Si1−xSnx solid solution by plasma-assisted co-sputtering

“…This technology [15][16][17] provides an independent control of energy and particles flux (ions, atoms) on the surfaces immersed in the plasma chamber (targets and substrates), thanks to the complete de-coupling between the plasma parameters (power supply, gas pressure) and the bias voltages applied to the surfaces. This operating flexibility allows handling both the chemical composition and microstructure, and implicitly the thermoelectric performance, of the deposited layers.…”

Investigation of Mg 2 (Si,Sn) thin films for integrated thermoelectric devices

“…[33,34]. The plasma is ignited in an Ar atmosphere by 20 dipolar plasma sources circularly arranged and supplied by microwave generators with a power of 2 kW, evenly distributed to the sources through power dividers [36].…”

“…The reported work allocated to the investigation as thin films of Mg 2 Si [25e32], Mg 2 Sn [33] and the ternary solid solutions [34,35] are mainly related to their synthesis. To our knowledge, only two articles report on the investigation of the TE properties of these materials as thin films.…”

MgH 2 thin films deposited by one-step reactive plasma sputtering

“…In particular, the AreH 2 auxiliary plasma was produced by 24 multi-dipolar microwave couplers in a sputtering chamber, within which immersed targets and substrate are independently biased [13,14]. Such a configuration allows an accurate and independent control of both the flux and energy of deposited particles [15]. The microwave power was maintained at 3 kW.…”