Deposition of thin films of Mg2Si1−xSnx solid solution by plasma-assisted co-sputtering

Le-Quoc, H.; Lacoste, A.; Béchu, Stéphane; Bès, A.; Bourgault, D.; Fruchart, D.

doi:10.1016/j.jallcom.2012.06.003

Cited by 16 publications

(10 citation statements)

References 26 publications

(23 reference statements)

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“…[33,34]. The plasma is ignited in an Ar atmosphere by 20 dipolar plasma sources circularly arranged and supplied by microwave generators with a power of 2 kW, evenly distributed to the sources through power dividers [36].…”

Section: Methodsmentioning

confidence: 99%

“…The reported work allocated to the investigation as thin films of Mg 2 Si [25e32], Mg 2 Sn [33] and the ternary solid solutions [34,35] are mainly related to their synthesis. To our knowledge, only two articles report on the investigation of the TE properties of these materials as thin films.…”

Section: Introductionmentioning

confidence: 99%

“…To our knowledge, only two articles report on the investigation of the TE properties of these materials as thin films. Mg 2 (Si,Sn) solid solutions were previously investigated as thin films for Si contents between 0.4 and 0.6 [34,35]. It was reported that the power factor of these thin films doesn't match that of bulk materials, with values lower than 3 Â 10 À4 WK À2 m À1 , while the possibility for improvement remained open.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of Mg 2 (Si,Sn) thin films for integrated thermoelectric devices

Prahoveanu

Lacoste

Béchu

et al. 2015

Journal of Alloys and Compounds

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of Mg 2 (Si,Sn) thin films for integrated thermoelectric devices

Prahoveanu

Lacoste

Béchu

et al. 2015

Journal of Alloys and Compounds

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“…Thin films were deposited on room temperature substrate by microwave plasma-assisted cosputtering method. The principal feature of this technology described in greater detail in [19,20] is the separation of the plasma production (regulated by the microwave power) from the polarization of the surfaces involved in the deposition process. This separation allows, on the one hand, an independent and individual polarization of a set of targets making possible the individual control of their sputtering rate through the potential which is applied to each of them.…”

Section: Boron Coating With Plasma Assisted Pvdmentioning

confidence: 99%

Boron-10 conversion layer for ultra-cold neutron detection

et al. 2019

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A: We report on the development of a 10 B conversion layer optimized for ultra-cold neutron detection with silicon detectors. The efficiency of this layer is high and roughly uniform over a large ultra-cold neutron velocity range. The designed titanium-boron-nickel multilayer film was deposited on silicon using a microwave plasma-assisted co-sputtering method (first, for test purpose, on silicon wafers, then directly on the surface of a CCD sensor). The obtained sensor was then tested using both cold and ultra-cold neutrons.

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“…1 This particular concept of electron cyclotron resonance (ECR) source has been invented for the production of high density and uniform magnetized plasmas of large dimensions without huge coils or numerous permanent magnets. These devices are now widespread and used for various purposes such as (i) deposition of thin films, [2][3][4] (ii) production of compound materials 5,6 with specific properties (magnetic shape memory alloys, thermoelectric materials), or (iii) production of diamond single crystals for optical windows, 7 just to name a few.…”

Section: Introductionmentioning

confidence: 99%

Multi-dipolar microwave plasmas and their application to negative ion production

et al. 2013

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During the past decade multi-dipolar plasmas have been employed for various purposes such as surface treatments in biomedicine, physical and chemical vapour deposition for hydrogen storage, and applications in mechanical engineering. On the other hand, due to the design and operational mode of these plasma sources (i.e., strong permanent magnets for the electron cyclotron resonance coupling, low working pressure, and high electron density achieved) they are suitable for studying fundamental mechanisms involved in negative ion sources used in magnetically confined fusion and particle accelerators. Thus, this study presents an overview of fundamental results obtained with: (i) a single dipolar source, (ii) a network of seven dipolar plasma sources inserted into a magnetic multipolar chamber (Camembert III), and (iii) four dipolar sources housed in a smaller metallic cylinder (ROSAE III). Investigations with Langmuir probes of electron energy probability functions revealed the variation of the plasma properties versus the radial distance from the axis of a dipolar source in its mid plane and allowed the determination of the proportion between hot and cold electron populations in both chambers. These results are compared with the density of hydrogen negative ions, measured using the photodetachment technique. Electron energy probability functions obtained in these different configurations show the possibility of both hot and cold electron production. The former is a prerequisite for increasing the vibrational level of molecules and the dissociation degree and the latter for producing negative ions via dissociative attachment of the cold electrons or via surface production induced by H atoms. V C 2013 AIP Publishing LLC. [http://dx.

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Deposition of thin films of Mg2Si1−xSnx solid solution by plasma-assisted co-sputtering

Cited by 16 publications

References 26 publications

Investigation of Mg 2 (Si,Sn) thin films for integrated thermoelectric devices

Investigation of Mg 2 (Si,Sn) thin films for integrated thermoelectric devices

Boron-10 conversion layer for ultra-cold neutron detection

Multi-dipolar microwave plasmas and their application to negative ion production

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