Investigation of Mg 2 (Si,Sn) thin films for integrated thermoelectric devices

Prahoveanu, Codrin; Lacoste, A.; Béchu, Stéphane; Vaulx, C. de; Azzouz, K.; Laversenne, L.

doi:10.1016/j.jallcom.2015.07.043

Cited by 13 publications

(5 citation statements)

References 35 publications

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“…Many conventional thermoelectric materials including alloys based on BiSbTe [13,14], PbTe [15,16], PbSe [17], skutterudite (based-on CoSb 3 ) [18], clathrate [19], Zintl [20] and half-Heusler alloys [21][22][23][24][25][26][27][28][29][30] are reported in the literature. Among these materials, recent works showed that Mg 2 X (X = Si, Sn, Ge) materials are potential interesting candidates as n-or p-type thermoelectric semiconductors at mid-temperature (500-800 K), depending on the nature of X [23][24][25][26][27][28][29][30][31]. These compounds are interesting due to their good thermoelectric performance, the abundance of toxic elements, very low thermal conductivity, good thermal and mechanical stability, but also lightweight in its component elements [24,32].…”

Section: Introductionmentioning

confidence: 99%

“…Among these materials, recent works showed that Mg 2 X (X = Si, Sn, Ge) materials are potential interesting candidates as n-or p-type thermoelectric semiconductors at mid-temperature (500-800 K), depending on the nature of X [23][24][25][26][27][28][29][30][31]. These compounds are interesting due to their good thermoelectric performance, the abundance of toxic elements, very low thermal conductivity, good thermal and mechanical stability, but also lightweight in its component elements [24,32]. One can also notice among Mg 2 X compounds, Mg 2 Si alloys as a n-type thermoelectric semiconductor, which is well placed to survive in typical industrial applications due to a relatively high Seebeck coefficient and a hardness of about 4-6 GPa [32].…”

Section: Introductionmentioning

confidence: 99%

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Influence of Sputtering Parameters on Structural, Electrical and Thermoelectric Properties of Mg–Si Coatings

et al. 2018

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Mg–Si thin films (23 ≤ at.% Si ≤ 43) were deposited by co-sputtering of Mg and Si targets in an argon atmosphere. Two groups of samples were prepared with respect to sputtering parameters. The first Group I was synthesized while residual pressure in the reactor was lower than 7 × 10−4 Pa and the second Group II when reactor was pumped down to pressure higher than 7 × 10−4 Pa. The Mg2Si phase appeared for all as-deposited films of Group I around the stoichiometric composition region (29 ≤ at.% Si ≤ 37) and in the Mg-rich region (at.% Si < 29) the Mg2Si and Mg phases coexisted. An amorphous structure was obtained for all as-deposited films of Group II no matter their composition (34 ≤ at.% Si ≤ 38) and the Mg2Si structure was achieved after post annealing under air at temperature ≥140 °C. Thermal stability of Mg2Si thin films was investigated by annealing treatments under air. Superficial Mg2Si structural decomposition began at T > 500 °C and layer morphology and structure damaged while annealing temperature increased up to 700 °C. The films’ electrical resistivity, free carrier concentration and mobility as well as Seebeck coefficient were measured and thermoelectric power factors were discussed vs. composition.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of Sputtering Parameters on Structural, Electrical and Thermoelectric Properties of Mg–Si Coatings

et al. 2018

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“…Mg 2 X (X = Si and Sn) materials have been gradually gaining attention and undergoing extensive research in recent years due to their remarkable TE properties, reliable thermal stability, cost-effectiveness, low toxicity, and abundance in the Earth’s crust. − As the conduction in the Mg 2 X system originates from intrinsic defects, appropriate doping methods can effectively enhance its TE performance and enable the achievement of ZT values greater than 1. , In comparison to Mg 2 Si, which possesses a bandgap of 0.7 eV, Mg 2 Sn exhibits a lower bandgap of 0.3 eV, positioning it as a medium-low temperature TE material with significant potential for the advancement of energy harvesting from human body heat. − …”

Section: Introductionmentioning

confidence: 99%

Enhanced Thermoelectric Performance of Mg–Sn Thin Films: Role of Mg₉Sn₅ Phase and One-Dimensional Electronic Structure

Chen,

Chou

et al. 2024

ACS Appl. Mater. Interfaces

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Mg–Sn alloy thin films have garnered significant attention for their outstanding thermoelectric (TE) properties and cost-effective elemental composition, making them potential candidates for wearable energy harvesting devices. While previous studies have explored the properties of these thin films, limited research has been conducted to identify physical factors that can further enhance their performance. In this study, we present a novel approach utilizing a convenient electron beam coevaporation technique to fabricate Mg–Sn alloy thin films. Experimental results revealed that controlling the tin content in the Mg–Sn thin films at 38.9% led to the formation of a mixed-phase structure, comprising Mg2Sn and Mg9Sn5. This dual-phase structure exhibited a notable advantage in enhancing the TE performance. The presence of the Mg9Sn5 phase significantly increased the carrier concentration, while maintaining the original Seebeck coefficient and mobility, thereby improving the conductivity of Mg2Sn. Theoretical calculations indicated that the Mg9Sn5 phase displayed 1D-like characteristics, leading to a highly effective valley degeneracy and consequently a high power factor. Overall, this work introduces a promising approach to fabricate high-performance Mg–Sn alloy thin films through electron beam coevaporation, opening up possibilities for their application in wearable energy harvesting devices.

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“…225 – Fm 3̅ m , Z = 4) (Figure a). Although several classes of thermoelectric materials, including tellurides, − half-Heusler alloys, , and higher manganese silicides, had been previously investigated, recently, it has been revealed that Mg 2 Si comprising two earth abundant and nontoxic elements has a significant potential for thermoelectric applications in the range of elevated temperatures above 500 K. − Plenty of works were dedicated to investigations of various strategies of improvement of the thermoelectric performance of this material, which included combinations of different traditional optimization methods, such as doping (e.g., by Al, Bi), strong chemical substitution (e.g., Mg 2 Si 1– x–y Sn x Ge y ), and mesostructuring. − In addition, it has been established that application of moderate stress/pressure can dramatically tune the relevant physical properties of narrow-band gap thermoelectrics, − and can also enhance the thermoelectric performance, for instance, in Al-doped Mg 2 Si. , …”

Section: Introductionmentioning

confidence: 99%

Unconventional Electronic Properties of Mg₂Si Thermoelectrics Revealed by Fast-Neutron-Irradiation Doping

et al. 2016

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In this work, we systematically investigated the electrical resistivity, Hall, and magnetoresistance effects of Aldoped Mg 2 Si thermoelectrics, irradiated with a fluence of fast neutrons and consequently isochronally annealed at moderate high temperatures up to 500 °C. We found that the fastneutron bombardment itself only slightly modified the electronic properties. Meanwhile, a series of the postirradiation high-temperature anneals affected the properties dramatically. Thus, after annealing at temperatures of 275−325 °C, Mg 2 Si:Al showed pronounced jumps in both the electrical resistivity and the Hall constant values by several orders of magnitude. This unexpected electronic transition corresponded to a significant variation in the carrier concentration. We proposed that this unusual electronic transition may be related to temperature-assisted chemical bonding of the radiation defects that can involve free charge carriers in the sample, thereby tuning dramatically its transport properties. We proposed a simple model for Mg 2 Si:Al thermoelectrics, which links the chemical bonding of the interstitial Mg ions with the electronic properties of this material. This finding suggests a new avenue to tuning of electronic properties and unconventional electronic transitions in materials with a high concentration of defects.

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Investigation of Mg 2 (Si,Sn) thin films for integrated thermoelectric devices

Cited by 13 publications

References 35 publications

Influence of Sputtering Parameters on Structural, Electrical and Thermoelectric Properties of Mg–Si Coatings

Influence of Sputtering Parameters on Structural, Electrical and Thermoelectric Properties of Mg–Si Coatings

Enhanced Thermoelectric Performance of Mg–Sn Thin Films: Role of Mg₉Sn₅ Phase and One-Dimensional Electronic Structure

Unconventional Electronic Properties of Mg₂Si Thermoelectrics Revealed by Fast-Neutron-Irradiation Doping

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Investigation of Mg 2 (Si,Sn) thin films for integrated thermoelectric devices

Cited by 13 publications

References 35 publications

Influence of Sputtering Parameters on Structural, Electrical and Thermoelectric Properties of Mg–Si Coatings

Influence of Sputtering Parameters on Structural, Electrical and Thermoelectric Properties of Mg–Si Coatings

Enhanced Thermoelectric Performance of Mg–Sn Thin Films: Role of Mg9Sn5 Phase and One-Dimensional Electronic Structure

Unconventional Electronic Properties of Mg2Si Thermoelectrics Revealed by Fast-Neutron-Irradiation Doping

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Enhanced Thermoelectric Performance of Mg–Sn Thin Films: Role of Mg₉Sn₅ Phase and One-Dimensional Electronic Structure

Unconventional Electronic Properties of Mg₂Si Thermoelectrics Revealed by Fast-Neutron-Irradiation Doping