Thin film silicon solar cells for space applications: Study of proton irradiation and thermal annealing effects on the characteristics of solar cells and individual layers

Kuendig, J.; Goetz, M.; Shah, A.; Gerlach, L.; Fernández, Emilio

doi:10.1016/s0927-0248(02)00486-5

Cited by 39 publications

(33 citation statements)

References 7 publications

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“…Similar thick diodes as well as thin ones were also degraded using low-energy proton beams and lower fluences as a means of comparison with earlier irradiation experiments published in literature [3].…”

Section: Introductionsupporting

confidence: 66%

“…In thin devices, the effects of proton [3][4][5], neutron [6] and photon irradiation have all very similar consequences on material and diode properties: metastable deep defects are created than can be annealed out. The process has been very extensively studied for light-soaking but only few experiments have been carried out in the case of irradiation.…”

Section: Introductionmentioning

confidence: 99%

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Radiation hardness of amorphous silicon particle sensors

Wyrsch

Miazza

Dunand

et al. 2006

Journal of Non-Crystalline Solids

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Radiation tests of 32 lm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high-energy 24 GeV proton beam up to fluences of 2 · 10 16 protons/cm 2 . The results are compared to irradiation of similar 1 lm and 32 lm thick n-i-p diodes using a proton beam of 405 keV at a fluence of 3 · 10 13 protons/cm 2 . All samples exhibited a drop of the photoconductivity and an increase in the dark leakage current under both high-and low-energy proton irradiation. An almost full recovery of the device performance was observed after a subsequent thermal annealing.

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Section: Introductionsupporting

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Radiation hardness of amorphous silicon particle sensors

Wyrsch

Miazza

Dunand

et al. 2006

Journal of Non-Crystalline Solids

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“…Therefore, the ultrasonic wave energy is absorbed predominantly by the solar cells defects and favors their redistribution toward the equilibrium state. Since the irradiation with gamma radiation mostly creates mobile radiation defects in solar cells, the ultrasonic treatment acts predominantly upon these defects and tends their redistribution [19]. Thus, the results of this study demonstrate that the ultrasonic treatment partly restores the electrical parameters of degraded silicon solar cells [20].…”

Section: Ultrasonic Treatmentmentioning

confidence: 90%

Recovery of the Electrical Parameters of Degraded Solar Cells by Ultrasonic Treatment

Tobnaghi¹

2016

Journal of Electrical Engineering and Technology

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-In the lifetime of solar cells and under normal operating conditions, electrical parameters of solar cells are degrading continuously because solar cells are ageing during outdoor exposure, which could deteriorate their electrical characteristics. In this paper, to simulate and accelerate the effects of aging, solar cells are exposed to the different doses of gamma radiation, since gamma radiation and aging produces similar effects in semiconducting devices. The electrical parameters of degraded silicon solar cells can be significantly recovered by ultrasonic treatment (UST). The restores of the silicon solar cells parameters such as efficiency (η), open circuit voltage (V oc ), short circuit current (I sc ), among other, after ultrasonic treatment is related to a redistribution of the radiation defects and an increase in the homogeneity of a solar cells crystal structure.

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“…With increasing the gamma radiation dose, the electron-hole recombination points increases Therefore the concentration of minority carrier traps will increase. Decrease in the minority carrier lifetime reduced the solar cells electrical properties (Kuendig, Goetz, Shah, Gerlach, & Fernandez, 2003). …”

Section: Impact Of Solar Radiation Variationmentioning

confidence: 99%

Ionizing Radiations (Alpha, Beta, Gamma) Effects on CdS / P-Si Heterojunction Solar Cell for Electrical and Optical Properties

El-Amin¹,

Saad²

2017

JMSR

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The effect of ionizing radiations (α,β,γ) in CdS/p-Si heterojunction solar cells are discussed in this paper. The short-circuit current density parameters before γ irradiation conditions have been improved up to 35 mA/cm 2 and after γ irradiation was 30 mA/cm 2 . The open circuit voltage before γ irradiation was 0.59 and 0.565 V after γ irradiation. The limitations of these devices were discussed by investigating the dependence of electrical and efficiency parameters in function of radiation time. The efficiency of the cell before radiation was equal to (11.2%) whenever, after the impact of both α, β and γ was follows, 4.7, 4.9, and 5.1% respectively. The fill factor before and after γ irradiation was 54.5 and 53 %. Studying and analyzing the cells using the I-V, with the change of time rate of γ radiation played a critical role in reducing the efficiency of solar cells. The campaign was carried out with different doses of a series of solar cells by exposing them to different time. The deterioration parameters of CdS/pSi solar cells by γ radiation led to strongly supports the results of minority carrier lifetime, which clearly showed diminishing minority carrier lifetime with increasing radiation dose.

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Thin film silicon solar cells for space applications: Study of proton irradiation and thermal annealing effects on the characteristics of solar cells and individual layers

Cited by 39 publications

References 7 publications

Radiation hardness of amorphous silicon particle sensors

Radiation hardness of amorphous silicon particle sensors

Recovery of the Electrical Parameters of Degraded Solar Cells by Ultrasonic Treatment

Ionizing Radiations (Alpha, Beta, Gamma) Effects on CdS / P-Si Heterojunction Solar Cell for Electrical and Optical Properties

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