Thin-film microstrip lines for MM and sub-MM/wave on-chip interconnects

Abstract-This paper presents for the first time the design, fabrication, and demonstration of a dielectric waveguide based ortho-mode sub-THz interconnect channel for planar chip-tochip communications. By combining the proposed new transition of microstrip line to dielectric waveguide orthogonally, the orthomode transition is constructed to form an ortho-mode channel. The measured minimum insertion losses for the Ey11 mode and the Ex11 mode are 6.6 dB with 20.3 GHz 3-dB bandwidth and 6.5 dB with 55.2 GHz 3-dB bandwidth, respectively. The simulation and measurement results agree well with each other.

Section: Experimental Demonstration a Fabricationmentioning

confidence: 99%

Ortho-Mode Sub-THz Interconnect Channel for Planar Chip-to-Chip Communications

Ding

et al. 2018

“…Manuscript received September 3, 1997; revised February 12, 1998 Materials typically used for dielectric layers and passivation in MMIC's include silicon oxides and nitrides, as well as organic compounds like polyimide and benzocylobutene (BCB) [4]. The dielectric layer thickness typically ranges from 0.2 m Si N passivation) to several micrometers SiO , polyimide), as does the metallization thickness.…”

Section: Onolithic Microwave Integrated Circuits (Mmic's)mentioning

confidence: 99%

Transmission lines and passive elements for multilayer coplanar circuits on silicon

Warns

Menzel

Schumacher

1998

Abstract-In this paper, propagation properties of both standard and multilayer coplanar lines on different types of silicon substrates, as well as a number of quasi-lumped and stub-type circuit elements, are investigated. For the transmission lines, emphasis is placed on losses. As examples for circuit elements, a lumped parallel resonator and a high-low impedance low-pass filter are demonstrated.

“…[12], [13], metallic waveguide [14]- [18], and dielectric waveguide [19], [20]. The dielectric waveguides with low loss dielectric material have much less losses than transmission lines and metallic waveguides since the conduction loss is avoided.…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency Micromachined Sub-THz Channels for Low-Cost Interconnect for Planar Integrated Circuits

Wang

et al. 2016

Abstract-This paper presents for the first time the design, fabrication, and demonstration of micromachined silicon dielectric waveguide based sub-THz interconnect channel for high efficiency, low cost sub-THz interconnect, aiming to solve the longstanding intra-/inter-chip interconnect problem. Careful studies of the loss mechanisms in the proposed sub-THz interconnect channel are carried out to optimize the design. Both theoretical and experimental results are provided with good agreement. To guide the channel design, a new Figure-of-Merit is also defined. The insertion loss of this first prototype with a 6-mm long interconnect channel is about 8.4 dB at 209.7 GHz, with a 3-dB bandwidth of 12.6 GHz.