Thin‐Film Integrated Ferroelectrics

Trolier‐McKinstry, Susan

doi:10.1002/3527600434.eap519

Cited by 8 publications

(8 citation statements)

References 61 publications

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“…Ito et al have utilized sputtered ZnO film to build a novel 100-MHz linear array by wet etching [17]. However, the piezoelectric coefficient and electromechanical coupling coefficient of ZnO materials ( d 33 ~ 7.5 pm/V, k t ~ 0.24) is very low [18], [19], and moreover, the element pitch produced is large (approximately 7λ in water at 100 MHz), making this array unsuitable for medical imaging. In our previous works, with lead zirconate titanate (PZT) thick films prepared by modified sol-gel method, an 80-MHz kerfed array and a 120-MHz kerfless linear array with 32 elements were fabricated using dry etching and photolithography, respectively [9], [10].…”

Section: Introductionmentioning

confidence: 99%

New fabrication of high-frequency (100-MHz) ultrasound PZT film kerfless linear array [Correspondence]

Zhu

Chan

Shung

et al. 2013

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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The paper describes the design, fabrication, and measurements of a high-frequency ultrasound kerfless linear array prepared from hydrothermal lead zirconate titanate (PZT) thick film. The 15-µm hydrothermal PZT thick film with an area of 1 × 1 cm, obtained through a self-separation process from Ti substrate, was used to fabricate a 32-element 100-MHz kerfless linear array with photolithography. The bandwidth at −6 dB without matching layer, insertion loss around center frequency, and crosstalk between adjacent elements were measured to be 39%, −30 dB, and −15 dB, respectively.

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Section: Introductionmentioning

confidence: 99%

New fabrication of high-frequency (100-MHz) ultrasound PZT film kerfless linear array [Correspondence]

Zhu

Chan

Shung

et al. 2013

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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“…The elements of integrated optics prepared on single crystal ferroelectric thin films (in particular, lithium niobate films) showing the entire complex of very important and interesting optical, electrical and physical properties are the most promising for creation of telecommunication systems [1][2][3] .…”

Section: Introductionmentioning

confidence: 99%

Modified sol-gel method for patterned lithium niobate thin film preparation

et al. 2008

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A key stage in production of the integrated optics devices is forming of microtopography on crystalline films. The current methods generally comprise two separate steps: producing of thin film and creation a topographical pattern on it. But the inherently large chemical stability of crystalline LiNbO 3 has effectively precluded the use of standard photolithographic patterning techniques. We present new approach based on the modified sol-gel technology using the photosensitive gel. In this case, the photolithography is used on the stage of dried gel whereupon the direct crystallization of patterned precursor film allows to create integrated optical element without subsequent etching of crystalline film. Presented method of patterned thin film preparation involves synthesis of photo-reactive complex of metal, which undergoes change under the UV light. This technology has allowed to obtain first samples of different types of waveguide devices.

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Section: Introductionmentioning

confidence: 99%

Stoichiometric lithium niobate thin films preparation by sol-gel method

Poghosyan

Guo

Manukyan

et al. 2007

Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications

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We present our studies on preparation of LiNbO 3 oriented stoichiometric thin films by sol-gel method. The technology of synthesis of precursor systems, containing Li and Nb, has been developed. Studies of structure, morphology, optical and physical properties were carried out. The lattice parameters have been determined and correspond to stoichiometric lithium niobate crystals. The crystallographic orientation of LiNbO 3 films corresponds to orientation of a sapphire substrate, i.e. on substrates with orientation (0001) the C axis of film is perpendicular to a substrate surface, and on ( 0 2 11 ) substrate C axes lays in a plane of a substrate. The developed method allowed to obtain lithium niobate thin films with 300-700 nm thickness, transparent, with precise crystallographic orientation both on sapphire substrate and conductive ZnO films.

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Thin‐Film Integrated Ferroelectrics

Cited by 8 publications

References 61 publications

New fabrication of high-frequency (100-MHz) ultrasound PZT film kerfless linear array [Correspondence]

New fabrication of high-frequency (100-MHz) ultrasound PZT film kerfless linear array [Correspondence]

Modified sol-gel method for patterned lithium niobate thin film preparation

Stoichiometric lithium niobate thin films preparation by sol-gel method

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