1976
DOI: 10.7567/jjaps.15s1.217
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Thin Film Evaluation Techniques for the ESFI SOS Technology

Abstract: The transistor parameters of the ESFI\circledRSOS field-effect transistors strongly depend on the properties of the thin epitaxial silicon film on the sapphire substrate: thickness (<0.8 µm), crystal quality, doping concentration and profile, interface states and lateral homogeneity. The crystal quality is measured by means of the optical absorption (E=2.0 to 2.7 eV) obtained by the reflectance interference method similar to the film thickness evaluation. An appropriately defined optical absorption factor ch… Show more

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Cited by 6 publications
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“…The absorption factor FA agrees well with other methods, e.g., electron diffraction and ion backscattering measurements. In addition, FA is in good correlation with transistor parameters, as for example the channel mobility (20,21). Therefore, FA was used in this present work as a tool to define the epitaxial film quality.…”
Section: Methodsmentioning
confidence: 99%
“…The absorption factor FA agrees well with other methods, e.g., electron diffraction and ion backscattering measurements. In addition, FA is in good correlation with transistor parameters, as for example the channel mobility (20,21). Therefore, FA was used in this present work as a tool to define the epitaxial film quality.…”
Section: Methodsmentioning
confidence: 99%