The Preparation and Properties of Heteroepitaxial Silicon

Cullen, G. W.

doi:10.1007/978-1-4612-6267-1_2

Cited by 4 publications

(10 citation statements)

References 197 publications

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“…As a diffusion source, we have used a layer of elemental Zn, ~100A thick, deposited by electroplating directly onto a GaAs surface after a pretreatment in a RuC13 solution. This process is described in more detail elsewhere (5).…”

Section: Resultsmentioning

confidence: 99%

Structural Perfection Testing of Films and Wafers by Means of Optical Scanner

Steigmeier¹,

Auderset²

1984

J. Electrochem. Soc.

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A B S T R A C TAn alternative use of an optical scanner is presented for rapid structural perfection testing of films and wafers.Specific e x a m p l e s are given: (i) for silicon-on-sapphire quality, (ii) for structural perfection of low pressure chemical vapor deposited a m o r p h o u s silicon, and (iii) for the distribution of precipitated oxygen in silicon wafers treated for internal gettering. Further, in phase transformable materials, the m e t h o d permits the determination of the depositional phase (amorphous or crystalline) after film growth and after annealing.In a previous paper, we reported on a laser scanner syst e m for dust and defect detection on silicon wafers~ thin films, and other surfaces (1). 1 The present work deals with an alternative and novel use of the above instrument, for testing tl~e structural perfection of various materials and assessment of thin film quality (2). Specifically, w e will describe the testing of silicon-onsapphire (SOS) wafers, the qualification of low pressure chemical vapor deposited (LPCVD) a m o r p h o u s silicon layers, and other materials. In addition to d e t e r m i n i n g the structural quality of crystalline or amorphous material, a rapid acceptability characterization of phase-transformable material can be performed, i.e., of a material w h i c h in a certain process can be deposited in either the a m o r p h o u s or the crystalline phase, d e p e n d i n g on the deposition conditions. This is exemplified for the case of as-deposited a m o r p h o u s or crystalline L P C V D silicon. Moreover, the laser scanner system is capable of determ i n i n g w h e t h e r the film of subsequently annealed and thus crystallized material has resulted from an asdeposited a m o r p h o u s layer, or from an as-deposited crystalline layer; this feature is important because silicon recrystallized from a m o r p h o u s deposited films is found to be of superior quality in terms of device performance. Finally, it is s h o w n that the m e t h o d of structural perfection testing can be used to qualify the precipitated oxygen distribution in single-crystal silicon wafers in connection with treatment for internal gettering. In summary, the alternative use of the laser scanner in the qualitycontrol m o d e is shown to be very effective in different fields of applications (IC technology, solar cells, thin films, and others).

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Section: Resultsmentioning

confidence: 99%

Structural Perfection Testing of Films and Wafers by Means of Optical Scanner

Steigmeier¹,

Auderset²

1984

J. Electrochem. Soc.

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“…Only sapphire, for which skills already existed in the jewellery trade, has been commercially exploited as a heteroepitaxial substrate. The four techniques employed to grow sapphire crystals have been discussed in detail by Cullen (1978) and will be briefly outlined here.…”

Section: The Sapphire Substratementioning

confidence: 99%

“…Second, the surface must be carefully polished to prevent the propagation of structural defects on the substrate into the heteroepitaxial silicon film. Cullen (1978) demonstrated that a decreasing quality of the sapphire surface finishing involves a rough surface of the as-deposited Si film as well as lattice defects resulting in anomalously high diffusion of dopants and poor electrical properties. The A1203 substrate polishing is, in general, a multi-step procedure.…”

Section: The Sapphire Substratementioning

confidence: 99%

“…This is justified by the economic importance of achieving this integrated circuit process, but also by the numerous difficulties, fundamental or technological, that the S O S material has reserved for the scientists. Review papers published at various times (Bore1 er a1 , Cullen 1978, Ipri 1981, Cristoloveanu et a1 1984 allow one to retrace the history of this development.…”

Section: Introductionmentioning

confidence: 99%

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Silicon films on sapphire

Cristoloveanu

1987

Rep. Prog. Phys.

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The physical properties of silicon on sapphire (SOS) thin films and their impact on the operation of integrated devices are systematically reviewed. The preparation of the SOS material is described from the fabrication of the sapphire substrate and the silicon film heteroepitaxy up to the .recently proposed regrowth techniques. The microscopic properties and the relevant methods used for inspection are discussed with emphasis on autodoping, stress, lattice defects and interface behaviour. Following the presentation of average transport and recombination parameters, deduced from measurements involving the contribution of the whole film, the non-homogeneity of the S O S film along the epitaxial direction will be outlined. The electrical properties of the silicon-sapphire interface and of the interfacial transition layer are compared to those of the front Si-SiO, interface. Attempts are made to correlate the data derived by various characterisation techniques in order to reveal a coherent image of the Si film volume sandwiched by two very dissimilar interfaces. Finally, the processing and the performance of SOS devices are discussed and favourably compared to the case of bulk Si technology.

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“…Before AlN deposition, annealing was carried out to remove damage on the surface of the (0001)-Al 2 O 3 substrate. 12) The conditions of annealing are listed in Table I. After annealing, substrate temperature was set at deposition temperature, and then NH 3 and TMA-back-up H 2 including TMA vapor were separately introduced into the reactor at nearly the same time using a three-way-air valve.…”

Section: Introductionmentioning

confidence: 99%

Growth of Atomically Flat-Surface Aluminum Nitride Epitaxial Film by Metalorganic Chemical Vapor Deposition

Uehara

Aota

Kameda

et al. 2005

Jpn. J. Appl. Phys.

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A high c-axis-oriented and atomically flat-surface aluminum nitride (AlN) film has been successfully deposited on a (0001)sapphire substrate by metalorganic chemical vapor deposition. We evaluated the dependences of surface roughness, tilted mosaicity and twisted mosaicity on the conditions of AlN deposition. It was found that the atomically flat-surface AlN film was deposited under the diffusion-limited area with suppression of vapor phase reaction at a substrate temperature of 1200 C and a V/III ratio of 800. It was also recognized that surface roughness was controlled by gas flow velocity, which is determined by both gas flow rate and pressure in reactor. Mean surface roughness (R a ) of the deposited AlN films was approximately 1A. The full width at half maximum of X-ray rocking curve for (0002) and ð10 1 12ÞAlN were approximately 100 and 2300 arcsec, respectively.

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The Preparation and Properties of Heteroepitaxial Silicon

Cited by 4 publications

References 197 publications

Structural Perfection Testing of Films and Wafers by Means of Optical Scanner

Structural Perfection Testing of Films and Wafers by Means of Optical Scanner

Silicon films on sapphire

Growth of Atomically Flat-Surface Aluminum Nitride Epitaxial Film by Metalorganic Chemical Vapor Deposition

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