Thin Film Evaluation Techniques for the Esfi Sos Technology

Optimization of the Deposition Conditions for Epitaxial Silicon Films on Czochralski Sapphire in the Silane‐Hydrogen System

“…The absorption factor FA agrees well with other methods, e.g., electron diffraction and ion backscattering measurements. In addition, FA is in good correlation with transistor parameters, as for example the channel mobility (20,21). Therefore, FA was used in this present work as a tool to define the epitaxial film quality.…”

Flame Fusion Growth of Spinel and Sapphire Crystals for ESFI SOS Technology

“…Therefore it offers a possibility of lower costs compared to the Czochralski method, especially if iridium crucibles have to be used. As compared with crucible-grown crystals, the perfection of Verneuil crystals is worse; the electrical properties, however, of silicon films deposited on both kinds of substrates (2)(3)(4) do not show a significant difference. Verneuil sapphire (5) and spinel are produced on a large scale for jewels and bearings; severe limitations, however, exist especially as far as crystals of large diameter and suitable orientation are concerned.…”

“…Evaporation was Key words: heat-treatment, LSI processing, metallization, uniform gold process. chosen over sputtering because (i) sputtering as opposed to filament evaporation can cause radiationinduced damage (2), leading to unwanted interface states and trapped charge in the MOS structures, and (ii) it was considered very difficult to anneal out any radiation damage since the combination of metal contacts and SisN4 in the intermediate dielectric layer seals the device from the hydrogen required for low temperature (~ 450~ annealing of the interface states (3,4). Sputter deposition has certain obvious advan-…”