Flame Fusion Growth of Spinel and Sapphire Crystals for ESFI SOS Technology

Falckenberg, R.

doi:10.1149/1.2132767

Cited by 10 publications

(2 citation statements)

References 10 publications

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“…Although very useful for fabricating small-size A1,03 gemstones, this technique is subject to severe limitations in the case of large diameter substrates: crystal cracking during the cooling phase and melt runover from the cap can occur. An improvement consists of lowering the thermal gradients and avoiding temperature shocks by using concentric tubes (Falckenberg 1976). The future extensive use of flame fusion substrates will depend on the balance between simplicity and lower price than the Czochralski growth method, but poorer performance of relevant integrated devices (Trilhe et a1 1975a, b).…”

Section: The Sapphire Substratementioning

confidence: 99%

Silicon films on sapphire

Cristoloveanu

1987

Rep. Prog. Phys.

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The physical properties of silicon on sapphire (SOS) thin films and their impact on the operation of integrated devices are systematically reviewed. The preparation of the SOS material is described from the fabrication of the sapphire substrate and the silicon film heteroepitaxy up to the .recently proposed regrowth techniques. The microscopic properties and the relevant methods used for inspection are discussed with emphasis on autodoping, stress, lattice defects and interface behaviour. Following the presentation of average transport and recombination parameters, deduced from measurements involving the contribution of the whole film, the non-homogeneity of the S O S film along the epitaxial direction will be outlined. The electrical properties of the silicon-sapphire interface and of the interfacial transition layer are compared to those of the front Si-SiO, interface. Attempts are made to correlate the data derived by various characterisation techniques in order to reveal a coherent image of the Si film volume sandwiched by two very dissimilar interfaces. Finally, the processing and the performance of SOS devices are discussed and favourably compared to the case of bulk Si technology.

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Section: The Sapphire Substratementioning

confidence: 99%

Silicon films on sapphire

Cristoloveanu

1987

Rep. Prog. Phys.

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“…Furthermore, the plastic behaviour and the consequent dislocation substructures in Verneuil samples have been extensively investigated (Barber & Tighe, 1965, 1966Go Â scin Â ska & Auleytner, 1979;Lagerlo È f et al, 1994). This last aspect is particularly important because Verneuil-grown corundum cracks, at the end of the growth process, along a surface parallel to the elongation axis (Falckenberg, 1976). To our knowledge, no study has been carried out on the crystallographic characteristics of different parts of a boule, corresponding to the different stages of the growth process.…”

Section: Introductionmentioning

confidence: 99%

Chemical and crystallographic investigations on the cracking of blue corundum, Al₂O₃, produced by the Verneuil technique

2000

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Corundum (Al2O3) boules grown by the Verneuil process generally crack along an irregular surface parallel to the elongation axis. In order to investigate the reasons for such cracking, a half boule of blue corundum, industrially produced following the Verneuil technique, was cut into slices (about 1 mm thick) parallel or normal to the elongation axis of the sample. All the slices were analysed by optical microscopy, energy dispersive spectrometry (EDS), flame atomic absorption spectrometry (FAAS), inductively coupled plasma atomic emission spectroscopy (ICP-AES) and by X-ray transmission topography, using synchrotron radiation. The two most interesting phenomena observed were: (a) a blue colour, the location of which was not homogeneous in the boule, but concentrated in a narrow (∼2 mm) ring in the outer region of the sample; (b) the development of a single crystal during the first stages of the growth and the formation of a macromosaic crystal, with domains that were slightly misoriented and subparallel to one another, in the middle part and at the top of the boule.

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Powder feeder for crystals of large diameter grown by the verneuil technique

Falckenberg

1978

Cryst Res and Technol

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To grow crystals of large diameter (= 50 mm) by t h e flame fusion process it is necessary t o feed powder with a flow rate of = 2 g/min into the gas stream, the grain size being as small as possible. The properties of vertically and horizontally excitated sieves are compared. A sieve arrangement with horizontal and vertical vibration is described, which at a mesh width of 90 pm has a powder flow of up to 5 g/min. The long range constancy was within f8Y0. Sieves with a mesh width < 90 prn can be used if a n ultrasonic disintegrator is mounted above the feeder sieve. Sapphire and Mg-A1 spinel crystals up to 65 mm in diameter could be grown.

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Flame Fusion Growth of Spinel and Sapphire Crystals for ESFI SOS Technology

Cited by 10 publications

References 10 publications

Silicon films on sapphire

Silicon films on sapphire

Chemical and crystallographic investigations on the cracking of blue corundum, Al₂O₃, produced by the Verneuil technique

Powder feeder for crystals of large diameter grown by the verneuil technique

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Flame Fusion Growth of Spinel and Sapphire Crystals for ESFI SOS Technology

Cited by 10 publications

References 10 publications

Silicon films on sapphire

Silicon films on sapphire

Chemical and crystallographic investigations on the cracking of blue corundum, Al2O3, produced by the Verneuil technique

Powder feeder for crystals of large diameter grown by the verneuil technique

Contact Info

Product

Resources

About

Chemical and crystallographic investigations on the cracking of blue corundum, Al₂O₃, produced by the Verneuil technique