Thin-film bolometer for high-frequency metrology

Brunetti, L.

doi:10.1016/0924-4247(92)80024-w

Cited by 10 publications

(5 citation statements)

References 9 publications

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“…Therefore, barretter mount based designs using metallic thin-film lines are adopted in this work. Similar techniques have been reported in [12]- [16] but at much lower frequencies. So far, the highest operation frequency of room temperature thin-film bolometer barretter mount is at 94 GHz reported in 1985 [15].…”

Section: Introductionsupporting

confidence: 79%

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D-Band Thin-Film Resistive Line Bolometer as Transfer Standard

Kamble,

Salek,

Wang

et al. 2023

IEEE Trans. Microwave Theory Techn.

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A bolometric thin-film based transfer standard with a novel structure for absolute power detection in D-band (110 -170 GHz) is reported. It uses a resonance-type matching technique with thin-film resistive lines. The same line functions as the sensing element. The change in the resistivity of the line under the incident wave is calibrated to measure the absolute RF power in the D-band. This paper presents the analysis using equivalent circuit models, the full-wave electromagnetic design, the fabrication and the comprehensive characterization of the device. The comparison between a single and a folded-line matching structure is performed, showing the wideband capability of the latter. The transfer standard consists of two sensors in one waveguide housing for RF power measurement, as well as for monitoring and calibrating out the ambient temperature variation. It has shown a very good short-term time response with only ~0.19 % deviation in a given time interval, which is very close to a commercial PM5 sensor with ~0.27 % deviation. The long-term time response is also impressive, with a deviation of less than 0.6 %, similar to a commercial PM5 sensor. The fast response time, good thermal isolation and ambient compensation ability make it suitable for transfer/working standards, which can be used in ambient temperature environments.

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Section: Introductionsupporting

confidence: 79%

“…Although the DC resistance of the power sensor element (thin-film line or thermistor) can usually be flexibly chosen, typically, this is around 200 Ω to match the widely available self-balancing bridge circuit in metrology [16], [26]. This value is initially chosen in this single-line design.…”

Section: A Single-line Designmentioning

confidence: 99%

D-Band Thin-Film Resistive Line Bolometer as Transfer Standard

Kamble,

Salek,

Wang

et al. 2023

IEEE Trans. Microwave Theory Techn.

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“…Ii=_-abcj 3 (2)°( s+a2)2(s+b2)2(s+c2)2 It is worth noting that, for a fixed value of I, the power dissipated depends both on the sensing element conductivity and on the incident EM-field angular frequency. In particular, Pdj has a maximum at max = [(6r-1) + ii.…”

Section: The Electromagnetic Modelmentioning

confidence: 99%

“…Unfortunately, the recently proposed probes based on diode and FET designs [1,2], as well as thin film bolometers [3], are still affected both by the presence of interrogating coaxial cables, producing an unwanted perturbation of the EM field under test, and by insufficient response at higher frequencies (i.e., beyond 40 GHz).…”

Section: Introductionmentioning

confidence: 99%

<title>Photonic all-silicon microsensor for electromagnetic power in the microwave and millimeter-wave range</title>

Rendina¹,

Bellucci²,

Cocorullo³

et al. 2000

SPIE Proceedings

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A new type ofnon-perturbing electromagnetic power sensorfor microwaves and millimeter-waves, based on the thermooptical effect in a silicon interferometric etalon cavity, is presented. The incidentfieldpower is partially dissipated into the all-silicon metal-less etalon, constituting the sensing element of the detector, so causing its temperature increase. This, in turn, induces the intensity modulation of a probe laser beam reflected by the cavity after a multiple beam interference process. The sensing element is directly connected to an optical fiber for remote interrogation, so avoiding the use of perturbing coaxial cables.The performances ofsuch a new class ofnon-perturbing and widebandprobes, in terms ofsensitivity and resolution are discussed in detail. The experimental results concerning the characterization of a preliminary prototype sensor are presented and compared with theoretical data. The dependence of the sensor response on the electromagnetic frequency and on the sensing element characteristics isfinally discussed.

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“…Ist die Strahlungsleistung mit der Kreisfrequenz ω = 2 • π ·/ (/: Frequenz) moduliert, und ist ω nicht klein gegen die Zeitkonstante des Bolometers τ = C w / G w , muß gemäß S (ω) = (/ B · R B · α )/(G w |/(1 + ω 2 · τ 2 )) (5) die Empfindlichkeitsabnahme mit ω berücksichtigt werden. Dabei ist C w die Wärmekapazität des Bolometerelementes.…”

Section: Empfindlichkeit Von Bolometernunclassified

Leistungsmessung im Millimeterwellengebiet bei Raumund Stickstofftemperaturen mit Dünnschicht-Bolometern

Janik¹,

Wolf²

1995

tm - Technisches Messen

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Power measurements in the millimeter wavelengths region at room and liquid nitrogen temperatures with thin-film bolometersIn the manufacture of bolometers for power mounts at millimeter wavelengths the application of thin-film technology has considerable advantages over the wellknown thermistor mounts. Well-matched mounts which have very small RF losses can be realised with bolometers made from metal films. If high temperature superconductors are used for the bolometer, very high responsivities exceeding the value of 1000 V/ W typical of semiconductor diodes in this frequency range can be obtained with edge bolometers operating at liquid nitrogen temperatures.

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Thin-film bolometer for high-frequency metrology

Cited by 10 publications

References 9 publications

D-Band Thin-Film Resistive Line Bolometer as Transfer Standard

D-Band Thin-Film Resistive Line Bolometer as Transfer Standard

<title>Photonic all-silicon microsensor for electromagnetic power in the microwave and millimeter-wave range</title>

Leistungsmessung im Millimeterwellengebiet bei Raumund Stickstofftemperaturen mit Dünnschicht-Bolometern

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