Thin-film acoustically-coupled transformer

Larson, J.D.; Ruby, R.

doi:10.1121/1.2185028

Cited by 3 publications

(2 citation statements)

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“…The design presented here couples an intrinsically single-ended driving resonant mode to an inherently differential sensing resonant mode, thereby optimizing electrode area. The mechanical coupling between two different types of resonators enables us to achieve a CMS of -48 dB, which is 20 dB better than previously demonstrated bulk acoustic wave single-ended to differential filters [18,19].…”

Section: Balanced-unbalanced Mems Filtermentioning

confidence: 80%

The Resonant Body Transistor

2010

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Cornell University 2009With quality factors (Q) often exceeding 10,000, vibrating micromechanical resonators have emerged as leading candidates for on-chip versions of high-Q resonators used in wireless communications systems, sensor networks, and clocking sources in microprocessors. However, extending the frequency of MEMS resonators generally entails scaling of resonator dimensions leading to increased motional impedance. In this dissertation, I introduce a new transduction mechanism using dielectric materials to improve performance and increase frequency of silicon-based RF acoustic resonators.Traditionally, electrostatically transduced mechanical resonators have used air-gap capacitors for driving and sensing vibrations in the structure. To increase transduction efficiency, facilitate fabrication, and enable GHz frequencies of operation, it is desirable to replace air-gap transducers with dielectric films.In my doctoral work, I designed, fabricated, and demonstrated dielectrically transduced silicon bulk-mode resonators up to 6.2 GHz, marking the highest acoustic frequency measured in silicon to date. The concept of internal dielectric transduction is introduced, in which dielectric transducers are incorporated directly into the resonator body. With dielectric films positioned at points of maximum strain in the resonator, this transduction improves in efficiency with increasing frequency, enabling resonator scaling to previously unattainable frequencies. Using internal dielectric transduction, longitudinal-mode resonators exhibited the highest frequency-quality factor ( f Q) product in silicon to date

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Section: Balanced-unbalanced Mems Filtermentioning

confidence: 80%

The Resonant Body Transistor

2010

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“…The design presented here couples an intrinsically single-ended driving resonant mode to an inherently differential sensing resonant mode, thereby optimizing electrode area. The mechanical coupling between two different types of resonators enables us to achieve a CMS of -48dB, which is 20dB better than previously demonstrated bulk acoustic wave single-ended to differential filters [3,4].…”

mentioning

confidence: 80%

Dielectrically Transduced Single-Ended to Differential MEMS Filter

Weinstein

Chandrahalim

Cheow

et al. 2006

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers

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Single-ended to differential micromechanical filters with large stop band rejection are ideal replacements for conventional SAW and FBAR filters [1,2] in sensor network transceivers and GSM and W-CDMA cell phones, which depend on differential signal paths. A differential output from the front-end filter eliminates the need for an off-chip balun in front-end radio design and increases filter linearity (Fig. 17.6.1). This paper reports on the design and performance of a single-ended input to differential output resonant electromechanical filter at 425MHz center frequency with 1MHz bandwidth (BW), 8dB insertion loss (IL), <5dB pass-band ripple, -50dB stop-band rejection, and -48dB common mode suppression (CMS), for a footprint of about 150×150µm 2 .

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