2011
DOI: 10.1016/j.materresbull.2011.02.044
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Thickness dependent transport and magnetotransport in CSD grown La0.7Pb0.3MnO3 manganite films

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Cited by 64 publications
(22 citation statements)
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“…In Fig.12, it is clearly seen that, for the samples having higher substitution of monovalent (LN20, LN25 and LN30) in which the size disorder effect is dominant over the transport favorable conditions, does not follow completely the ZDE polynomial law, specially at low temperatures (indicated by the encircled area and enlarged views with theoretically fitted data -violet lines in Fig.12). In order to understand the low temperature transport mechanism (well below LN2 temperature) in detail, the resistivity minima model has been fitted to all the samples under various applied magnetic fields [31,32]. Disorder enhanced coulombic interaction induced weak localization leads to electron -electron scattering at low temperatures, which enhances the resistivity at low temperature which can be understood using the expression: ρ = [1 / (σ 0 + BT 1/2 )] + ρ n T n [31,32].…”
Section: Resultsmentioning
confidence: 99%
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“…In Fig.12, it is clearly seen that, for the samples having higher substitution of monovalent (LN20, LN25 and LN30) in which the size disorder effect is dominant over the transport favorable conditions, does not follow completely the ZDE polynomial law, specially at low temperatures (indicated by the encircled area and enlarged views with theoretically fitted data -violet lines in Fig.12). In order to understand the low temperature transport mechanism (well below LN2 temperature) in detail, the resistivity minima model has been fitted to all the samples under various applied magnetic fields [31,32]. Disorder enhanced coulombic interaction induced weak localization leads to electron -electron scattering at low temperatures, which enhances the resistivity at low temperature which can be understood using the expression: ρ = [1 / (σ 0 + BT 1/2 )] + ρ n T n [31,32].…”
Section: Resultsmentioning
confidence: 99%
“…In general the intrinsic transition temperature, T C , becomes higher as compared to the extrinsic transition temperature, T P [23]. If T P > T C , the polarization remains high which gets suppressed with the increase in temperature.…”
Section: Introductionmentioning
confidence: 95%
“…This upturn can also be related to an electrostatic blockade of charge carriers (eg electrons) at boundaries [38] originated mainly due to the competition between the elastic and inelastic scattering of the charge carriers below and above upturn temperature (T up ), respectively [12]. T up is the temperature below which resistivity starts to increase with decrease in temperature ( figure 7).…”
Section: Resultsmentioning
confidence: 99%
“…A c c e p t e d M a n u s c r i p t 12 Observed upturn in resistivity can be understood on the basis of electrostatic blockade model which predicts that resistivity has the temperature dependnce in the form of ρ (T) α exp (E B / T) 1/2 , where E B is the electrostatic blocking energy. In another words, E B is the energy required for the charge carriers (in the present case, itinerant e g electrons) to pass through (overcome) the barriers, i.e.…”
Section: Page 12 Of 41mentioning
confidence: 99%
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