Comparison of charge transport studies of chemical solution and pulsed laser deposited manganite-based thin film devices

Interface based field effect configuration and charge conduction mechanisms for manganite thin film heterostructures

“…28,41 While considering a few other reports available on comparative studies on charge transport properties of mixed valent manganite thin films, heterostructures and devices grown using the PLD technique and the CSD method, one can realize better charge conduction across the thin layers of mixed valent manganites grown using the low cost CSD method as compared to the sophisticated PLD technique. [45][46][47][48] All these reports clearly demonstrate that, in comparison with the PLD one, CSD grown manganite based (i) thin film devices exhibit larger current across the prepared interface, 45 (ii) thin films exhibit larger values of T P with lower resistivity, 46 (iii) thin films possess considerably smaller lattice strain between the film and the substrate 47 and (iv) thin films exhibit larger T P . 48 For the purpose of comparison between CSD and PLD methods, the high vacuum based sophisticated PLD technique was employed to fabricate a similar manganite structure consisting of a 50 nm LMO thin layer over the surface of a thin film of 100 nm LCMO/LAO (where the same LAO substrate was utilized).…”

“…These observations clearly support the earlier reports where better charge conduction in manganite based thin films has been identified for the CSD method, as compared to the PLD method. [45][46][47][48] Interesting influences can be observed for field effect configuration based LMO/LCMO interface resistivity behaviors where one can realize that under an applied positive interface electric field (or an applied negative interface electric field), throughout the temperature range studied (i.e. 200 K to 300 K), LMO/LCMO interface resistivity can be found to be much lower (or higher) for the CSD grown LMO/LCMO interface [Fig.…”