Thickness dependent structure of β-FeSi2 grown on silicon by solid phase epitaxy

Growth of β-FeSi2 particles on silicon by reactive deposition epitaxy

“…region at 77 K compared to the continuous ␤-FeSi 2 layers or ␤-FeSi 2 single crystals [13,14]. Several methods, such as solid phase epitaxy (SPE) [15], reactive deposition epitaxy (RDE) [16,17] and Fe ion implantation [6,18] have been used to grow ␤-FeSi 2 nanoislands on Si substrates. In this work, the RDE technique is used to grow ␤-FeSi 2 nanoislands on Si substrates at 600 • C, subjected to further in situ annealing at 600 • C for different annealing times.…”

High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target

“…Furthermore, it has much superior features such as chemical stability, non-toxicity and its components are abundant on the earth, which as well favor the use of b-FeSi 2 as a new type of environmentally friendly material. Up to now, many growth methods have been explored to fabricate the b-FeSi 2 films, including reactive deposition epitaxy (RDE) [9,10], ion beam synthesis (IBS) [11,12], solid phase epitaxy (SPE) [13,14], molecular beam epitaxy (MBE) [15,16] and pulsed laser deposition (PLD) [17,18], etc. Among these methods, PLD is an extremely successful method in fabricating a wide variety of thin films and its deposition conditions are easily controlled.…”

Theoretical and experimental study of semiconducting iron disilicide and its applications to thin film solar cells

“…Both polycrystalline and epitaxial β-FeSi 2 thin films have been synthesized by this approach [40,[45][46][47][48][49][50]. It was observed that an annealing temperature of 900 °C appears to be the upper limit for β-FeSi 2 formation, beyond which it may transform into the metallic α phase.…”