High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target

Resonant energy transfer from nanocrystal Si to β-FeSi 2 in hybrid Si/β-FeSi 2 film

“…[2][3][4] Many techniques have been adopted to produce nanosized β-FeSi 2 materials, for instance, ion beam synthesis, reactive epitaxy, magnetron sputtering, pulsed-laser deposition, and molecular beam epitaxy, and their PL properties have also been explored. [5][6][7][8][9] It has been pointed out that the origin of the PL from β-FeSi 2 is quite complicated because of the controversial band gap structure. Most experiments have suggested that β-FeSi 2 has a direct band gap, [1,[4][5][6] but some reports have indicated otherwise.…”