Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy

Lee, C.D.; Kim, B.K.; Kim, J.W.; Park, H.L.; Chung, C.; Chang, Suk‐Kyu; Lee, J.I.; Noh, Sam Kyu

doi:10.1016/0022-0248(94)90794-3

Cited by 16 publications

(1 citation statement)

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“…processes that constitute redox reactions, a few demonstrations of ligand exchange reactions using H 2 Se have been reported. These include the ZnCl 2 −H 2 Se, , Me 2 Zn−H 2 Se, − and Me 2 Cd−H 2 Se , processes. Interestingly enough, in situ studies using surface photointerference showed that the latter two processes proceed with opposite mechanisms when it comes to the exchange reaction point, reactions and and and . , In the case of ZnSe, the exchange reaction takes place during the Me 2 Zn pulse, while in the case of CdSe it takes place during the H 2 Se pulse. normalH 2 Se false( ads false) + Me 2 Zn false( normalg false) → ZnSe false( normals false) + 2 MeH false( normalg false) normalH 2 Se false( normalg false) → normalH 2 Se false( ads false) Me 2 Cd false( normalg false) → Me 2 Cd false( ads false) Me 2 Cd false( ads false) + normalH 2 Se false( normalg false) → CdSe false( normals false) + 2 MeH false( …”

Section: Introductionmentioning

confidence: 99%

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb₂Te₃ and GeTe from (Et₃Si)₂Te and Chlorides

et al. 2009

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Reaction mechanisms in the atomic layer deposition (ALD) of Sb 2 Te 3 from SbCl 3 and (Et 3 Si) 2 Te at 60 °C and GeTe from GeCl 2 3 C 4 H 8 O 2 (1,4-dioxane complex of GeCl 2 ) and (Et 3 Si) 2 Te at 90 °C were studied in situ with a quadrupole mass spectrometer (QMS) and a quartz crystal microbalance (QCM). Also some experiments were conducted on reactions in ALD of the phase change material GST (germanium antimony telluride, Ge 2 Sb 2 Te 5 ). The byproduct in both the binary telluride processes was found to be Et 3 SiCl, and about 78% (36%) of it was released during the SbCl 3 (GeCl 2 3 C 4 H 8 O 2 ) pulse. Obviously -Te(SiEt 3 ) surface groups serve as reactive sites for the metal precursors, cf. -OH surface groups in the oxide ALD processes that use water as the oxygen source. The dioxane, on the other hand, was expectedly found to be released entirely during the GeCl 2 3 C 4 H 8 O 2 pulse. When depositing GST the mechanism of the SbCl 3 -(Et 3 Si) 2 Te reaction was found to change so that only about 50% of the byproduct Et 3 SiCl was released during the SbCl 3 pulse. The same effect was experienced when the SbCl 3 -(Et 3 Si) 2 Te process was executed on surfaces of Al 2 O 3 and Au.

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Section: Introductionmentioning

confidence: 99%

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb₂Te₃ and GeTe from (Et₃Si)₂Te and Chlorides

et al. 2009

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Effect of thermal annealing on the physical properties of Zn1−x Cu x Se thin films deposited by close spaced sublimation technique

et al. 2013

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Thin films of Zn 1−x Cu x Se (x= 0.00, 0.05, 0.10, 0.15, 0.20) were grown on glass substrates by closed space sublimation technique. The deposited films were annealed at 200 • C and 400 • C in air for 1 h. The annealed samples have been investigated through Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), spectroscopic ellipsometer, spectrophotometer and Raman spectroscopy. Through RBS, the composition of the films was calculated and compared with the initial concentration. Structural characterization including crystal structure, crystal orientation, lattice parameter, grain size, strain and dislocation density were carried out using XRD data. From XRD spectra it was revealed that the as-deposited and annealed films were polycrystalline in nature with zinc-blende structure. However, the crystallinity and the grain size were improved with the increase of annealing temperature. According to Raman spectroscopy, it was observed that as deposited and annealed samples have the same characteristic vibrational modes of ZnSe at low and high frequency optical phonon modes while another mode was observed for 400 • C annealed samples at 745 cm −1 . Spectroscopic ellipsometer has been used to found annealing effect on the optical properties of ZnSe. The band gap energy has been determined using transmission spectra. It was found that the band gap energy of the film increased with the increase of annealing temperature.

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Growth by OMVPE and X-ray analysis of ZnTe and epilayers on III–V substrates

Tomasini

Haidoux

Maurin

et al. 1996

Journal of Crystal Growth

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Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy

Cited by 16 publications

References 11 publications

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb₂Te₃ and GeTe from (Et₃Si)₂Te and Chlorides

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb₂Te₃ and GeTe from (Et₃Si)₂Te and Chlorides

Effect of thermal annealing on the physical properties of Zn1−x Cu x Se thin films deposited by close spaced sublimation technique

Growth by OMVPE and X-ray analysis of ZnTe and epilayers on III–V substrates

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Thickness dependent properties of ZnSe on (100) GaAs grown by atomic layer epitaxy

Cited by 16 publications

References 11 publications

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb2Te3 and GeTe from (Et3Si)2Te and Chlorides

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb2Te3 and GeTe from (Et3Si)2Te and Chlorides

Effect of thermal annealing on the physical properties of Zn1−x Cu x Se thin films deposited by close spaced sublimation technique

Growth by OMVPE and X-ray analysis of ZnTe and epilayers on III–V substrates

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In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb₂Te₃ and GeTe from (Et₃Si)₂Te and Chlorides

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb₂Te₃ and GeTe from (Et₃Si)₂Te and Chlorides