Growth by OMVPE and X-ray analysis of ZnTe and   epilayers on III–V substrates

Tomasini, P.; Haidoux, A.; Maurin, M.; Tédenac, J. C.

doi:10.1016/0022-0248(96)00133-9

Cited by 6 publications

(3 citation statements)

References 37 publications

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“…However, when the ZnTe layers are grown beyond a certain critical thickness, the strain due to the lattice mismatch between ZnTe and the specific substrate becomes fully relaxed at the growth temperature. For example, it has been reported that the critical thickness for ZnTe grown on GaAs (0 0 1) substrate by MBE is about 15 nm, compared with 180 nm for ZnTe grown on GaSb substrate using organometallic vapor phase epitaxy (OMVPE) [10,11]. Therefore, for ZnTe thicknesses in the range of 2.3-2.5 mm, it is reasonable to assume that the compressive strain due to lattice mismatch is fully relaxed in the ZnTe epilayers at the growth temperature.…”

Section: Resultsmentioning

confidence: 99%

Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (001) substrates for electronic and optoelectronic device applications

Fan

Ouyang

Liu

et al. 2011

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (001) substrates for electronic and optoelectronic device applications

Fan

Ouyang

Liu

et al. 2011

Journal of Crystal Growth

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“…There have been numerous reports of coefficient of thermal expansion (CTE) for HgCdTe as a function of Cd concentration at room temperature. Skauli et al 67 . provided comprehensive experimental data.…”

Section: Laser Beam Detection Based On Avalanche Photodiodesmentioning

confidence: 99%

“…There have been numerous reports of coefficient of thermal expansion (CTE) for HgCdTe as a function of Cd concentration at room temperature. Skauli et al 67 provided comprehensive experimental data. CTE in the epitaxial layers of HgCdTe and its deviation with temperature play an essential and fundamental role in IR applications CTE mismatch between the HgCdTe layers and the substrate or HgCdTe layers in the neighborhood from high growth to low operating temperatures can lead to severe performance reduction or failure due to excessive thermal pressure.…”

Section: Average Coefficient Of Thermal Expansionmentioning

confidence: 99%

Analysis of structures and technologies of various types of photodetectors used in laser warning systems: a review

Mohammadnejad,

Aasi

2023

Opt. Eng.

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With the advancement of laser technology in recent decades, this device has been used in a wide range of applications, such as medical sciences, military, industry, holography, spectroscopy, and astronomy. In past years, military operations for better communication depended on radiofrequency. Vulnerability to security threats and exposure to electromagnetic interference were the main problems of this electromagnetic spectrum region. Therefore, attention was drawn to the visible and infrared (IR) regions. This spectrum provided a secure transfer of the data. The probability of intercepting a laser signal is very low due to the divergence of the narrow beam and the coherence of its optical beam. Hence, it has made this device a good candidate for secure military operations. As a result, the laser based-devices and laser-guided weapons (LGW), such as laser target designator and beam riders, have become an undeniable tool on battlefields. Reduction of the vulnerability to the LGW threats by providing laser detection, angle of arrival, wavelength discrimination, and temporal characterization is the main intention of the laser warning system (LWS). This system consists of three major subsystems. The optical subsystem will consist of spectral filters, focusing lenses, and the detection one, which is made of a few detectors in a unique array's configuration [especially IR photodetector (IRPD)], and the processing subsystem. In the last decades, with the progress made in nanofabrication and nanotechnology, consequential research has been done to enhance the performance of IRPDs, such as increasing the production yield, making it simple in the fabrication processes, lowering the fabrication cost, and increasing the operating temperature. This review paper gives a particular concentration to the photodetectors used in the detection subsystem of LWSs. In addition, some nanostructures have been surveyed to enhance the optical coupling and light-matter interaction of IRPD. Also, all studied structures are compared in a table. Finally, the detection subsystem we simulated and built at the Nanoptronics Research Center will be analyzed.

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Effect of substrate temperature on photoconductivity, structural, and optical properties of vacuum evaporated Zinc Telluride films

Seyam

2012

Journal of Alloys and Compounds

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Growth by OMVPE and X-ray analysis of ZnTe and epilayers on III–V substrates

Cited by 6 publications

References 37 publications

Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (001) substrates for electronic and optoelectronic device applications

Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (001) substrates for electronic and optoelectronic device applications

Analysis of structures and technologies of various types of photodetectors used in laser warning systems: a review

Effect of substrate temperature on photoconductivity, structural, and optical properties of vacuum evaporated Zinc Telluride films

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