Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (001) substrates for electronic and optoelectronic device applications

Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy

“…For the growth of the samples described in this paper, typically a thin ZnTe epilayer was first grown on a a) Electronic mail: yhzhang@asu.edu GaSb (001) substrate, as described previously. 2,3 After the growth of ZnTe in the II-VI chamber, the wafer was transferred to the III-V chamber for the GaSb growth. Since the commonly used temperature for the growth of GaSb (T g ¼ 470 C) is considerably higher than that used for ZnTe (T g ¼ 320 C), the surface of ZnTe layer is likely to be severely degraded if the growth of GaSb on ZnTe is initiated at such a high temperature.…”

“…Due to the high cost and limited size of commercial GaSb and ZnTe substrates, ZnTe epilayers grown on GaAs and Si have been proposed and successfully demonstrated as virtual substrates. 3,4 Realization of the growth of high-quality GaSb on ZnTe virtual substrates should enable monolithic integration of InAs-and GaSb-based semiconductor devices, such as mid-wavelength infrared (IR) laser diodes and longwavelength IR photodetectors composed of InAs/InAsSb and InAs/(In)GaSb type-II superlattices, 5 on large low-cost GaAs or Si substrates. Although some preliminary studies of the growth of GaSb on ZnTe have been reported, 6,7 realization of high-quality crystalline materials of GaSb on ZnTe still remains challenging.…”

Atomic-Scale Characterization of II–VI Compound Semiconductors

“…12,13 Substrates that have been studied include GaSb (0.13% mismatch with ZnTe), InAs (0.75%), InP (3.85%), and GaAs (7.30%). All of these ZnTe samples ($2.4 lm thick) were grown by molecular beam epitaxy (MBE) under virtually identical conditions, so any differences in materials properties and microstructure can be attributed to interfacial strain caused primarily by lattice-mismatch differences, as well as thermal expansion coefficients and growth temperature.…”

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

“…[1][2][3][4] These two families of semiconductor materials have identical crystalline structures and very similar thermal expansion coefficients, and they can be grown lattice-matched on GaSb or InAs substrates with low defect densities. Furthermore, these materials are ideal for multi-junction solar cells, as their direct bandgaps allow the use of thin absorbing layers that can be current-matched to efficiently capture the entire solar spectrum.…”