2004
DOI: 10.1002/pssb.200301988
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Thickness dependence of the dielectric function of ferroelectric thin films

Abstract: A Green's function technique for a modified Ising model in a transverse field is applied, which allows to calculate the real and the imaginary parts of the dielectric function Eðk; EÞ for ferroelectric thin films. Compared to bulk materials the frequency of the soft-mode in thin film is reduced whereas the damping is enhanced. The dependence of Eðk; EÞ on temperature and film thickness is obtained for k ¼ 0 numerically. It is demonstrated, that the maximum of the dielectric function decreases with decreasing f… Show more

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Cited by 6 publications
(9 citation statements)
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“…The obtained results are in good agreement with the behaviour of the dielectric function in AFE PbZrO 3 nanoparticles obtained by Chattopadhyay et al [9] and by Jiwei et al [11] for PNZST thin films. The behaviour of the dielectric constant for this case is similar to the dielectric behaviour of FE PbTiO 3 and BaTiO 3 thin films obtained experimentally [4 -6] or theoretically [14]: With a decrease in the film thickness or the particle size, c T decreases, max e decreases, and the peaks become increasingly broader. Figure 2 shows the temperature dependence of the dielectric constant for the other case s b J J > .…”
Section: The Dielectric Functionsupporting
confidence: 70%
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“…The obtained results are in good agreement with the behaviour of the dielectric function in AFE PbZrO 3 nanoparticles obtained by Chattopadhyay et al [9] and by Jiwei et al [11] for PNZST thin films. The behaviour of the dielectric constant for this case is similar to the dielectric behaviour of FE PbTiO 3 and BaTiO 3 thin films obtained experimentally [4 -6] or theoretically [14]: With a decrease in the film thickness or the particle size, c T decreases, max e decreases, and the peaks become increasingly broader. Figure 2 shows the temperature dependence of the dielectric constant for the other case s b J J > .…”
Section: The Dielectric Functionsupporting
confidence: 70%
“…The behaviour of the dielectric constant of the AFE thin film for this case is similar to the dielectric behaviour of KDP-typ FE thin films [8,14]. Therefore it could explain the results of the analogous to KDP-typ AFE compounds, for example NH 4 H 2 PO 4 .…”
Section: The Dielectric Functionsupporting
confidence: 51%
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“…While we are not dealing with microwave wavelengths in this study, the bonds between a thin film and a substrate have been theorized to cause damping in a number of other situations as well, e.g. : friction in the flow of electrons in conducting and semi-conducting thin films (Lazarev et al, 2003), damping of the alignment of dipoles in ferroelectric and anti-ferroelectric thin films (Wesselinowa, 2005;Wesselinowa and Trimper, 2004), damping of molecular vibrations in thin films at infrared wavelengths (Chu, 1993), and damping of dipole vibration near the surface of a waveguide (LaFortune and Hall, 2002). For lack of specific data on damping in our system, we chose a reduction in the dielectric constant of our coating of similar relative magnitude to that used in Friedman (1998) (k=10 8 cm −1 , ε min =1.05).…”
Section: Discussionmentioning
confidence: 99%