Thermospin effects in parallel coupled double quantum dots in the presence of the Rashba spin orbit interaction and Zeeman splitting * Xue Hui-Jie( ) a)b) , Lü Tian-Quan( ) a) † , Zhang Hong-Chen( ) c) , Yin Hai-Tao( ) b) , Cui Lian( ) a) , and He Ze-Long( ) a)
Within the framework of the modified Ginzburg–Landau–Devonshire phenomenological theory, we study the properties of a ferroelectric thin film with surface transition layer, considering the effect of electrodes. The combined effect of the electrode and surface transition layer on the properties (including the polarization, transition temperature and coercive filed) of a ferroelectric thin film is discussed in detail. The results show that the surface transition layer and the electrode can induce the phase transition from ferroelectric to paraelectric phase.
The γ‐ray total dose radiation effects on Zr‐doped HfO2 (HfZrO) and Al‐doped HfO2 (HfAlO) ferroelectric thin films are comparatively studied. The J–E, P–E, C–V, εr–f curves and fatigue characteristics of both HfZrO and HfAlO thin films are measured and analyzed with the increasing total dose from 0 to 5 Mrad (Si). The remnant polarization (Pr) values of both HfZrO and HfAlO thin films first decrease and then increase with the increasing total dose. A competitive mechanism between the pinned domains and increasing polarization switching charges induced by radiation is proposed to explain this phenomenon. This work presents doped HfO2 film with great radiation tolerance for nuclear and aerospace applications.
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