Thermomagnetic residual offset in integrated hall plates

Ruther, Patrick; Schiller, Ulf; Janke, R.; Oliver, Paul

doi:10.1109/jsen.2003.820318

Cited by 22 publications

(4 citation statements)

References 5 publications

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“…The offset voltage is defined as the Hall voltage measured in the absence of a magnetic field. Offset voltages are usually caused by mechanical stress, thermal gradients, geometrical errors, defects, and other irregularities within the device [24], [25]. Implementing current-spinning has been shown to reduce the offset voltage by a factor of over 1000 [26], [27].…”

Section: A Device Operation and Shape Optimizationmentioning

confidence: 99%

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

et al. 2019

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The current-and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The effect of metal contact lengths on sensitivity and sensor offset was evaluated. Calculations that take into account the shape of the device show that devices with point-like contacts have the highest current-scaled sensitivity (68.9 V/A/T), while devices with contacts of equal length to their non-contact sides have the highest voltage-scaled sensitivity (86.9 mV/V/T). The sensitivities of the two other devices follow the predicted trends closely. All the devices have offsets less than 20 µT at low supply current operation (< 300 µA) and most remain below 35 µT at higher supply current (up to 1.2 mA). The consistent low offsets across the devices imply that the choice of Hall-effect sensor geometry should mainly depend on whether the device is currentbiased or voltage-biased and the frequency at which it will operate. This work demonstrates that GaN Hall-effect sensor performance can be improved by adjusting the geometry of the Hall-effect plate specific to its function (e.g., power electronics, navigation, automotive applications).Index Terms-Hall effect, gallium nitride, AlGaN/GaN, InAlN/GaN, offset voltage, sensitivity, geometry. Engineering

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Section: A Device Operation and Shape Optimizationmentioning

confidence: 99%

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

et al. 2019

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“…Besides capacitive effects [12,15,59], many siliconbased microdevices for the transduction of mechanical inputs exploit piezoresistive effects. Stimulated by studies of sensor effects in integrated Hall devices [60,61], the authors' group started developing novel piezoresistive silicon sensors around the year 2000 [62,63].…”

Section: Mechanical Silicon Microsensors and Systemsmentioning

confidence: 99%

Advanced silicon microstructures, sensors, and systems

Oliver

Gaspar

Ruther

2007

IEEJ Transactions Elec Engng

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This paper presents the progress in silicon-based biomedical microstructures, material characterization techniques, and mechanical microsystems by the authors' research team. Microneedle and microelectrode arrays with fluidic through-wafer vias and electrical contacts were developed. The structures are designed for dermatological and biological applications such as allergy testing, surface electromyography, and spatially resolved impedance spectroscopy. The characterization of thin films has relied on the bulge test. By the formulation of more powerful models, the application range of the bulge test was extended to elastically supported thin-film multilayers. This enables the mechanical properties of thin films to be determined reliably. Finally, progress in the operation and application of novel stress sensors based on CMOS diffusions and field effect transistors and exploiting the pseudo-Hall effect is reported. Their integration into powerful single-chip microsystems is described. Applications include stress mapping, force and torque measurements, and tactile surface probing of microcomponents. 

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“…The software performs the correction based on real-time readout of the chip temperature and interpolation. Residual offsets [17] are below 5 µV (standard deviation) at 160 • C after accelerated life testing. The Hall voltages are summed in the current domain after a transconductance amplification stage and appropriate sign inversion a k = ±1.…”

Section: B Electrical Signal Chainmentioning

confidence: 98%

A Stray-Field-Immune Magnetic Displacement Sensor With 1% Accuracy

Dupré¹,

Bidaux²,

Dubrulle

et al. 2020

IEEE Sensors J.

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We present a new Hall sensor design for the accurate and robust measurement of linear displacement. Implemented in CMOS, the sensor is based on a novel gradient measurement concept combining Hall elements with integrated magnetic concentrators. In typical applications with practical Ferrite magnets, the peak output voltage of the Hall transducers is only around 1.7 mV at the maximum operating temperature of 160℃, and thus requires high-performance low-offset readout electronics. Over its 15-mm linear displacement range, the sensor's total error is 1% including manufacturing tolerances, trimming accuracy, temperature, aging effects, and practical magnet constraints. In addition, the sensor is immune to magnetic stray fields up to 5 mT, complying with the most stringent automotive norm.

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Thermomagnetic residual offset in integrated hall plates

Cited by 22 publications

References 5 publications

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

Advanced silicon microstructures, sensors, and systems

A Stray-Field-Immune Magnetic Displacement Sensor With 1% Accuracy

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