Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

Alpert, Hannah S.; Dowling, Karen M.; Chapin, Caitlin A.; Yalamarthy, Ananth Saran; Benbrook, Savannah R.; Köck, Helmut; Ausserlechner, Udo; Senesky, Debbie G.

doi:10.1109/jsen.2019.2895546

Cited by 28 publications

(17 citation statements)

References 33 publications

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“…The offset, , was held constant in the simulation at 5.5 µV and the magnitude of the induced voltage, , was held at 1 V•s/mT. Sheet density, ns, was 2.1×10 13 cm -2 , as measured experimentally for the InAlN/GaN Hall-effect sensor at room temperature [2]. It is observed that at 2-ω the output voltage increases linearly with an increase in Bo and is not affected by the magnitude of α and β.…”

Section: Case 1: Simulationmentioning

confidence: 99%

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Hall-Effect Sensor Technique for No Induced Voltage in AC Magnetic Field Measurements Without Current Spinning

Lalwani¹,

Yalamarthy²,

Senesky³

et al. 2021

Preprint

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Accurately sensing AC magnetic field signatures poses a series of challenges to commonly used Hall-effect sensors. In particular, induced voltage and lack of high-frequency spinning methods are bottlenecks in the measurement of AC magnetic fields. We describe a magnetic field measurement technique that can be implemented in two ways: 1) the current driving the Hall-effect sensor is oscillating at the same frequency as the magnetic field, and the signal is measured at the second harmonic of the magnetic field frequency, and 2) the frequency of the driving current is preset, and the measured frequency is the magnetic field frequency plus the frequency of the current. This method has potential advantages over traditional means of measuring AC magnetic fields used in power systems (e.g., motors, inverters), as it can reduce the components needed (subsequently reducing the overall cost and size) and is not frequency bandwidth limited by current spinning. The sensing technique produces no induced voltage and results in a low offset, thus preserving accuracy and precision in measurements. Experimentally, we have shown offset voltage values between 8 and 27 μT at frequencies ranging from 100 Hz to 1 kHz, validating the potential of this technique in both cases

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Section: Case 1: Simulationmentioning

confidence: 99%

“…The offset, , was held constant in the simulation at 21 µV and the magnitude of the induced voltage, , was held at 1 V•s/mT. Sheet density, ns, was 2.1×10 13 cm -2 , as measured experimentally for the Halleffect sensor at room temperature [2].…”

Section: Case 2: Simulationmentioning

confidence: 99%

Hall-Effect Sensor Technique for No Induced Voltage in AC Magnetic Field Measurements Without Current Spinning

Lalwani¹,

Yalamarthy²,

Senesky³

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

show abstract

“…Recently, there has been a demand for the stable Hall sensor operation at extreme temperatures [23,24] and also in harsh radiation environments as encountered in space exploration, determination of Curie temperatures of ferromagnetic materials [25], magnetic diagnosis of thermonuclear reactors [26] and current sensing in electric vehicles [27]. Emergence of new promising materials and advances in processing technologies continue to propel research on Hall sensors [28][29][30][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

“…The geometry introduces an additional factor termed as the geometrical correction factor in the sensitivity or gain of the sensor. A recent work has reported geometrical correction factor of a 2DEG-based Hall sensor at room temperature [31]. However, the variation of this factor with temperature as well as field needs to be studied.…”

Section: Introductionmentioning

confidence: 99%

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

Kumar

Muralidharan

Narayanan

2021

IET Circuits, Devices & Syst

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The authors report experimental investigations on Hall sensors based on AlGaN/GaN heterojunctions grown on silicon 111 (Si 111) substrates. Realisation of two-dimensional electron gas-based Hall sensors on Si substrates can have the advantages of low cost and integrability with complementary metal-oxide semiconductor circuits. Design and fabrication of such Hall sensors and their characterisation over a wide temperature range of 75 to 500 K are reported. The authors experimentally investigate the temperature dependence of the transresistances, sheet resistance and current-related sensitivity (or gain) of such Hall sensors. The current-related sensitivity is shown to be reasonably constant over the complete temperature range and certain inevitable variations in current-related sensitivity can easily be compensated. The temperature dependence of the transresistance can be used for such compensation. The variation of the geometrical correction factor of the Hall sensor with the applied magnetic field strength and the operating temperature is also studied. The authors also demonstrate the possibility of realising Hall sensors with a high geometrical correction factor ( ≈0.97), which is practically insensitive to variations in temperature ( ≃2% from 75 to 500 K) and applied magnetic field, for applications such as in electromechanical devices.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…The Hall voltage ( V H ) results from the Hall effect generated by electrical current in a conductor, where the magnetic field is formed and is orthogonal to the electrical current. The most popular use of the Hall effect is in sensing (Alpert et al, 2019; Anuchin, Zharkov, Shpak, Aliamkin, & Vagapov, 2019; Ramsden, 2006). Sun et al (2016) have designed a wireless electrical current sensor, which consists of a wireless module, Hall sensor, and energy harvester.…”

Section: Introductionmentioning

confidence: 99%

Hall effect sensors using polarized electron cloud spin orientation control

Arumona

Garhwal

Youplao

et al. 2020

Microscopy Res & Technique

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A silicon microring circuit embedded gold film with unique characteristics is proposed for Hall effect, current, and temperature sensing applications. The microring circuit is operated by the input polarized laser sources, in which the space–time distortion control can be employed. A gold film is embedded at the microring center. The whispering gallery mode (WGM) is generated and applied for plasmonic waves, from which the trapped electron cloud oscillation is formed. Through the input port, the input polarized light of 1.55 μm wavelength fed into the space–time control circuit. Spin‐up |↑〉(|0〉) and spin‐down |↓〉(|1〉) of polarized electrons result when the gold film is illuminated by the WGM. The electric current passing through the gold film generates a magnetic field (B), which is orthogonal to the electric field. Hall voltage is obtained at the output of the circuit, from which the microring space–time circuit can operate for Hall's effect, current, and temperature sensing device. The simulation results obtained have shown that when the input power of 100–500 mW is applied, the optimum Hall effect, current, and temperature sensitivities are 0.12 μVT−1, 0.9 μVA−1, and 6.0 × 10−2 μVK−1, respectively. The Hall effects, current, and temperature sensors have an optimum response time of 1.9 fs.

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Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors

Cited by 28 publications

References 33 publications

Hall-Effect Sensor Technique for No Induced Voltage in AC Magnetic Field Measurements Without Current Spinning

Hall-Effect Sensor Technique for No Induced Voltage in AC Magnetic Field Measurements Without Current Spinning

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

Hall effect sensors using polarized electron cloud spin orientation control

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