Advanced silicon microstructures, sensors, and systems

Oliver, Paul; Gaspar, J.; Ruther, Patrick

doi:10.1002/tee.20155

Cited by 19 publications

(19 citation statements)

References 62 publications

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“…By inserting these figures in (3), one obtains w 0 = 16.48 μm for the center deflection. When using the model that neglects bending effects [21], [27], [36], the result is w 0 = 16.55 μm, just 0.42% higher. Regarding the stress distribution, the model in [21], [36], and [37] yields a uniform σ max value of 2.130 GPa.…”

Section: Composite Diaphragm Modelmentioning

confidence: 95%

“…By using this solution, the integration in (2) is carried out explicitly and (2) is rewritten as (4), which is shown at the bottom of the page [25]- [27], where the coefficients β i,j are listed in Table II. Note that the second right-hand term appearing in (4) is the additional strain in the diaphragm due to the elongation of the structure by its out-of-plane deflection properly scaled by D 0 /2a.…”

Section: Composite Diaphragm Modelmentioning

confidence: 99%

“…Note that the second right-hand term appearing in (4) is the additional strain in the diaphragm due to the elongation of the structure by its out-of-plane deflection properly scaled by D 0 /2a. Equation (4) is easily solved for S by numerical iteration with the starting value S (0) = S 0 + D 0 π 2 w 2 0 /4a 2 [20], [21], where w 0 = w(0) denotes the center deflection, and provided that this starting value is larger than the instability buckling effective line force, as analytically modeled elsewhere [25]- [27]. Equations (3) and (4) constitute the load-deflection law of a composite prestressed long clamped diaphragm.…”

Section: Composite Diaphragm Modelmentioning

confidence: 99%

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Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long $\hbox{Si}_{3}\hbox{N}_{4}$ and $\hbox{SiO}_{2}/\hbox{Si}_{3}\hbox{N}_{4}$ Diaphragms

Yang

Gaspar

Oliver³

2008

J. Microelectromech. Syst.

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The bulge test is successfully extended to the determination of the fracture properties of silicon nitride and oxide thin films. This is achieved by using long diaphragms made of silicon nitride single layers and oxide/nitride bilayers, and applying a comprehensive mechanical model that describes the mechanical response of the diaphragms under uniform differential pressure. The model is valid for thin films with arbitrary z-dependent plane-strain modulus and prestress, where z denotes the coordinate perpendicular to the diaphragm. It takes into account the bending rigidity and stretching stiffness of the layered materials and the compliance of the supporting edges. This enables the accurate computation of the load-deflection response and stress distribution throughout the composite diaphragm as a function of the load, in particular at the critical pressure leading to the fracture of the diaphragms. The method is applied to diaphragms made of single layers of 300-nm-thick silicon nitride deposited by lowpressure chemical vapor deposition and composite diaphragms of silicon nitride grown on top of thermal silicon oxide films produced by wet thermal oxidation at 950 • C and 1050 • C with target thicknesses of 500, 750, and 1000 nm. All films characterized have an amorphous structure. Plane-strain moduli E ps and prestress levels σ 0 of 304.8 ± 12.2 GPa and 1132.3 ± 34.4 MPa, respectively, are extracted for Si 3 N 4 , whereas E ps = 49.1 ± 7.4 GPa and σ 0 = −258.6 ± 23.1 MPa are obtained for SiO 2 films. The fracture data are analyzed using the standardized form of the Weibull distribution. The Si 3 N 4 films present relatively high values of maximum stress at fracture and Weibull moduli, i.e., σ max = 7.89 ± 0.23 GPa and m = 50.0 ± 3.6, respectively, when compared to the thermal oxides (σ max = 0.89 ± 0.07 GPa and m = 12.1 ± 0.5 for 507-nm-thick 950 • C layers). A marginal decrease of σ max with thickness is observed for SiO 2 , with no significant differences between the films grown at 950 • C and 1050 • C. Weibull moduli of oxide thin films are found to lie between 4.5 ± 1.2 and 19.8 ± 4.2, depending on the oxidation temperature and film thickness.[ 2007-0269]Index Terms-Bulge test, fracture, pooled Weibull analysis, silicon nitride (Si 3 N 4 ), silicon oxide (SiO 2 ).

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Section: Composite Diaphragm Modelmentioning

confidence: 95%

Section: Composite Diaphragm Modelmentioning

confidence: 99%

Section: Composite Diaphragm Modelmentioning

confidence: 99%

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Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long $\hbox{Si}_{3}\hbox{N}_{4}$ and $\hbox{SiO}_{2}/\hbox{Si}_{3}\hbox{N}_{4}$ Diaphragms

Yang

Gaspar

Oliver³

2008

J. Microelectromech. Syst.

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“…3). Reviews of advances in MEMS, microstructures, and microsystems are available elsewhere [38], [39]. …”

Section: Introductionmentioning

confidence: 99%

Review: Semiconductor Piezoresistance for Microsystems

et al. 2009

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Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.

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“…Each unit cell of split ring resonator is printed over the one side of the dielectric substrate and a perpendicular wire strip on the other side. The overall dimensions of sub-wavelength structures are set in between λ/10 to λ/5 [38]. Dimensions for both types of metamaterial cells are summarized in Table 1.…”

Section: Proposed Metamaterials Unit Cell Structuresmentioning

confidence: 99%

Subwavelength negative index planar terahertz metamaterial arrays using spiral split ring resonators for near field sensing

Naeem

Ismail

Alhawari

et al. 2015

JAE

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This study reports new shape of meta-material array structures having electric and magnetic resonances designed for terahertz (THz) frequency band. The proposed structures exhibit left handed meta-material propertiesin THz frequency band. The introduced meta-material split ring resonators in this paper are constructed using a single loop of conducting wire strip printed over a very thin low permittivity polyimide dielectric substrate. The effective parameters like permeability and negative index are extracted from the simulated complex scattering parameters using direct retrieval method. Unloaded Qfactor is calculated for proposed terahertz metamaterial resonators. The proposed arrays are tested by loading different dielectric samples in order to confirm the testing capability. Significant shift in the transmission is observed. The reported array structures are novel in terms of their left handed behavior in THz frequencies. High values of Q-factor reported here, are suitable for near field sensing applications.

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Advanced silicon microstructures, sensors, and systems

Cited by 19 publications

References 62 publications

Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long $\hbox{Si}_{3}\hbox{N}_{4}$ and $\hbox{SiO}_{2}/\hbox{Si}_{3}\hbox{N}_{4}$ Diaphragms

Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long $\hbox{Si}_{3}\hbox{N}_{4}$ and $\hbox{SiO}_{2}/\hbox{Si}_{3}\hbox{N}_{4}$ Diaphragms

Review: Semiconductor Piezoresistance for Microsystems

Subwavelength negative index planar terahertz metamaterial arrays using spiral split ring resonators for near field sensing

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