2020
DOI: 10.1109/ted.2020.3009085
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Thermoelectric Property Requirements for On-Chip Cooling of Device Transients

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Cited by 18 publications
(9 citation statements)
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“…This leads to temporal changes in the intensities of the hotspots, where the time scale is too short for system-level cooling to be effective during the dissipation time scales. Nimmagadda et al [245] theoretically explored on-chip TEC over short (≈100 ms) durations as a potential solution for managing transitions near the junction. Net cooling occurs when the rise in the peak transient temperature is reduced in the presence of an operating TEC in comparison with that in its absence.…”
Section: Conclusion and Prospectsmentioning
confidence: 99%
See 1 more Smart Citation
“…This leads to temporal changes in the intensities of the hotspots, where the time scale is too short for system-level cooling to be effective during the dissipation time scales. Nimmagadda et al [245] theoretically explored on-chip TEC over short (≈100 ms) durations as a potential solution for managing transitions near the junction. Net cooling occurs when the rise in the peak transient temperature is reduced in the presence of an operating TEC in comparison with that in its absence.…”
Section: Conclusion and Prospectsmentioning
confidence: 99%
“…Nimmagadda et al. [ 245 ] theoretically explored on‐chip TEC over short (≈100 ms) durations as a potential solution for managing transitions near the junction. Net cooling occurs when the rise in the peak transient temperature is reduced in the presence of an operating TEC in comparison with that in its absence.…”
Section: Conclusion and Prospectsmentioning
confidence: 99%
“…This effect is called the Seebeck effect [134]. A suitable material combination for TEC has a high Seebeck coefficient, a high electrical conductivity, and a high thermal conductivity [135]. An example of such a material is bismuth telluride.…”
Section: Peltier Elementsmentioning
confidence: 99%
“…A recent computational study evaluated the effectiveness of an embedded unipolar TEC for transient active cooling of a hotspot, as shown in Fig. 4(a) [57]. As established in Section IV, active cooling requires thermoelectric materials with high S 2 σ and high k. This study showed that conventional TEC materials such as Bi 2 Te 3 alloys do not provide any cooling advantage due to their intrinsically low thermal conductivities (k ≈ 1.5 W/mK) compared to that of the native Si substrate (k ≈ 130 W/mK).…”
Section: Transient Operationmentioning
confidence: 99%
“…Enhancement of the PF is more consequential for cooling applications. In a recent work, we explored the concept of active cooling in managing thermal transients, where the cooling depends on the PF and not Z [57]. The 2-D electron gas (2-DEG) in heterostructures and in atomic layer materials also appears to be promising in this regard.…”
Section: Future Prospects For Te Coolingmentioning
confidence: 99%