Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Abstract

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technologies for the over-current performance of SiC power modules in power electronics converters. It presents the limitations produced at the power module level by packaging materials which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials. Specifically, technologies for over-current related temperatures in excess of 200 • C are discussed. The paper also discusses potential technologies which have been proven or may be potential candidates for improving the safe operating area. The discussed technologies are use of phase change materials below the semiconductor chip, Peltier elements, new layouts of the power modules, control and modulation techniques for converters. Special attention has been given to an overview of various potential phase change materials which can be considered for high-temperature operations.

Enabling Short-Term Over-current Capability of SiC Devices using Microchannel Cooling

“…The complete power module with MCs attached is shown in Fig. 2 with the module structure taken from [2]. This section discusses the performance of an MC block and MC cooling in the power module.…”

“…ms Various methods have been investigated to keep the chip temperature within thermal limits during current transients as well as during steady-state steady operation. The upper limit of temperature is about 175 • C for Silicon (Si) devices while it would reach 250 • C for Silicon Carbide (SiC) devices in the near future [2], [3]. The limitation of 250 • C for SiC chips comes from the other components of the power module, not the chip itself.…”

“…The methods investigated to handle OCs are passive methods such as adding heat-absorbing materials below/above the chip and active methods such as using Peltier elements. Using heat-absorbing materials on top of the chip has also been proposed and discussed in detail in [2] and [3]. Heatabsorbing materials could be either sensible materials (which do not change their physical state) or phase change materials (PCMs) [4].…”

“…Metals, diamond, and graphite have high thermal conductivity as compared to PCMs. Hence, PCMs could have applications in the seconds and minutes range while metals, diamonds, and graphite would have applications for OCs of a few milliseconds to seconds [2], [3]. On the other hand, Peltier elements work on the principle of the thermoelectric effect.…”

Co-wide-bandgap conformally heteroepitaxial perovskite–monolithic SiC nanowire array with quantum-confined blue luminescence

“…ilicon carbide is a family of wide-bandgap semiconductors possessing excellent mechanical and electrical properties. They are ideal for high-temperature and high-power electronic devices 1) and nuclear radiation detectors. 2) However, bulk SiC is an inefficient light emitter owing to the indirect bandgap.…”