Thermoelectric properties of indium doped PbTe1-ySey alloys

Bali, Ashoka; Wang, Heng; Snyder, G. Jeffrey; Mallik, Ramesh Chandra

doi:10.1063/1.4890320

Cited by 27 publications

(14 citation statements)

References 33 publications

(47 reference statements)

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“…In addition, such types of inclusions can cause collective phonon scattering from nanoprecipitates, meso-structured grain boundaries, and other crystallographic defects that could pave the way for reduction in lattice thermal conductivity [7,49,52]. In this work, for heavily-doped GTS-Bi samples, an ultra-low lattice thermal conductivity of ~0.7 Wm −1 K −1 was achieved at 523 K.

κ_{t o t a l}

obtained for these doped crystalline materials; especially, the Bi-doped ones are essentially in the range with the

κ_{t o t a l}

values of some of the well-known effective thermoelectric materials [15,42,49,53,54,55,56,57]. …”

Section: Resultsmentioning

confidence: 73%

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

et al. 2017

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Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge20Te77Se3 glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge20Te77Se3)100−xMx (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge20Te77Se3)100−xBix (x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm−1 K−1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses.

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κ_{t o t a l}

obtained for these doped crystalline materials; especially, the Bi-doped ones are essentially in the range with the

κ_{t o t a l}

values of some of the well-known effective thermoelectric materials [15,42,49,53,54,55,56,57]. …”

Section: Resultsmentioning

confidence: 73%

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

et al. 2017

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“…Pb 0.98 In 0.02 Te 0.8 S 0.2 in comparison with the other reported n-type ternary and quaternary lead chalcogenides: Cr-doped PbTe 1-y Se y , 30 I-doped PbTe 1-y Se y ,51 Cl-doped PbSe 1-y S y ,52 Cl-dopedPbTe 1-x-y Se x S y ,53 Cl-doped PbS 1-y Te y ,54 and In-doped PbTe 1-y Se y ,55 with cold side temperature 323 K.…”

mentioning

confidence: 53%

High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition

et al. 2016

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Good thermoelectric materials should have high engineering figure-of-merit (ZT) eng , not peak ZT, to achieve high conversion efficiency. In this work, we achieved a good (ZT) eng by optimizing the carrier concentration to improve the room temperature ZT using deep lying dopant, indium, in PbTe 1-y S y. It was found that a room temperature ZT as high as ~0.5 and a peak ZT ~1.1 at about 673 K were obtained in Pb 0.98 In 0.02 Te 0.8 S 0.2 due to a lower thermal conductivity by alloy scattering and Spinodal decomposition. The calculated efficiency could be as high as ~12% at cold side 323 K and hot side 773 K. The approach is expected to work in other materials systems too.

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“…Thus, indium can possibly lead to stability over a large range of the composition, while iodine can control the composition. Iodine doped PbTe was studied by Pei et al 20 achieving a zT of 1.4 at 700 K. Indium doping was done in PbSe 1Ày Te y which yielded a zT of 0.66 at 800 K. 21 Two phase PbTe with indium secondary phase resulted in a zT of 0.78 at 723 K. 22 Previously, indium and iodine codoping has been attempted by Guch et al 23 who have achieved a zT of 0.45 at 600 K (Ref. 19) and 0.61 at 655 K, 23 respectively.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric properties of In and I doped PbTe

Bali

Chetty

Sharma

et al. 2016

Journal of Applied Physics

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A systematic study of structural, microstructural, and thermoelectric properties of bulk PbTe doped with indium (In) alone and co-doped with both indium and iodine (I) has been done. X-ray diffraction results showed all the samples to be of single phase. Scanning electron microscopy (SEM) results revealed the particle sizes to be in the range of micrometers, while high resolution transmission electron microscopy was used to investigate distinct microstructural features such as interfaces, grain boundaries, and strain field domains. Hall measurement at 300 K revealed the carrier concentration $10 19 cm À3 showing the degenerate nature which was further seen in the electrical resistivity of samples, which increased with rising temperature. Seebeck coefficient indicated that all samples were n-type semiconductors with electrons as the majority carriers throughout the temperature range. A maximum power factor $25 lW cm À1 K À2 for all In doped samples and Pb 0.998 In 0.003 Te 1.000 I 0.003 was observed at 700 K. Doping leads to a reduction in the total thermal conductivity due to enhanced phonon scattering by mass fluctuations and distinct microstructure features such as interfaces, grain boundaries, and strain field domains. The highest zT of 1.12 at 773 K for In doped samples and a zT of 1.1 at 770 K for In and I co-doped samples were obtained.

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Thermoelectric properties of indium doped PbTe1-ySey alloys

Cited by 27 publications

References 33 publications

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition

Thermoelectric properties of In and I doped PbTe

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