2016
DOI: 10.1016/j.nanoen.2016.02.040
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High thermoelectric performance of n-type PbTe1−S due to deep lying states induced by indium doping and spinodal decomposition

Abstract: Good thermoelectric materials should have high engineering figure-of-merit (ZT) eng , not peak ZT, to achieve high conversion efficiency. In this work, we achieved a good (ZT) eng by optimizing the carrier concentration to improve the room temperature ZT using deep lying dopant, indium, in PbTe 1-y S y. It was found that a room temperature ZT as high as ~0.5 and a peak ZT ~1.1 at about 673 K were obtained in Pb 0.98 In 0.02 Te 0.8 S 0.2 due to a lower thermal conductivity by alloy scattering and Spinodal decom… Show more

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Cited by 64 publications
(61 citation statements)
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“…Compared with the maximum ZT value (0.58) of Pb 0.988 Sb 0.012 Te, the Pb 0.988 Sb 0.012 Te–13%GeTe–Nano pellet achieves ≈140% improvement of the maximum ZT value. This high thermoelectric ZT value outperforms many n‐type PbTe reported so far especially at the low temperature range (300–800 K) . Furthermore, the average ZT avg value of ≈1.04 is obtained in the temperature range from 300 to 773 K ( Figure ) for Pb 0.988 Sb 0.012 Te–13%GeTe–Nano, which is higher than the average ZT avg values reported for n‐type PbTe.…”
Section: Resultsmentioning
confidence: 48%
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“…Compared with the maximum ZT value (0.58) of Pb 0.988 Sb 0.012 Te, the Pb 0.988 Sb 0.012 Te–13%GeTe–Nano pellet achieves ≈140% improvement of the maximum ZT value. This high thermoelectric ZT value outperforms many n‐type PbTe reported so far especially at the low temperature range (300–800 K) . Furthermore, the average ZT avg value of ≈1.04 is obtained in the temperature range from 300 to 773 K ( Figure ) for Pb 0.988 Sb 0.012 Te–13%GeTe–Nano, which is higher than the average ZT avg values reported for n‐type PbTe.…”
Section: Resultsmentioning
confidence: 48%
“…Furthermore, the average ZT avg value of ≈1.04 is obtained in the temperature range from 300 to 773 K ( Figure ) for Pb 0.988 Sb 0.012 Te–13%GeTe–Nano, which is higher than the average ZT avg values reported for n‐type PbTe. [18,23,29a,30]…”
Section: Resultsmentioning
confidence: 99%
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“…(i) quantum confinement of electron charge carriers; 8 (ii) synergistic nano-structuring; [9][10][11][12][13] (iii) nanoinclusions, which enable acoustic phonon scatterings; 14,15 (iv) electron filtering; 16 (v) convergence of electronic band valleys; [17][18][19][20] (vi) fostering resonant levels by impurities inside the valence band; 21 (vii) alloying to create point defects; [22][23][24] (viii) complex crystal structures like skutterudites, 25,26 Zintl compounds, 27,28 hetero-structured superlattice thin-films; 29 (ix) semi-conducting glasses, [30][31][32][33][34] and (x) utilization of magnetism, [35][36][37][38] for instance.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, the thermoelectric performance in PbTe 1−x Se x ternary alloys can be increased by nanostructuring, resulting in low lattice thermal conductivity. Nanostructuring in the PbTe-PbS system can be achieved using bulk phase separation either by nucleation or spinodal decomposition depending on the relative phase fraction [19].Recent advances report that the lattice thermal conductivity in the quaternary system of (PbTe) 1−x−y (PbSe) x (PbSe) y can be reduced by point defect, which is produced by triple disorder in the rock salt structure [20][21][22]. High ZT ≈ 2.2 at 800 K was obtained in p-type (PbTe) 1−2x (PbSe) x (PbS) x quaternary alloys due to band engineering and phonon scattering from point defects [20,23,24].…”
mentioning
confidence: 99%