Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides

Abstract

An analysis of the metalorganic vapor-phase epitaxial (MOVPE) growth from a thermodynamic point of view is described for binary nitrides: GaN, InN and AlN. The equilibrium partial pressures are calculated for the input V/III ratios. It is shown that there are three deposition modes, growth, etching and droplet modes, depending on the partial pressures. The phase diagram for deposition is also calculated for the parameters of growth temperature and extent of ammonia decomposition. The conditions required for InN growth are discussed.

Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

“…Hence, it is very important to grow high-quality AlN layers on sapphire substrates so that they can be used as the underlying layers for the subsequent growth of AlGaNbased device layers. In accordance with the results of theoretical analyses based on thermodynamics, AlN is a material that can be grown easily without etching under most growth conditions [2]. However, Al atoms are less mobile than Ga atoms, which makes the migration process of Al precursor during epitaxial growth difficult [3][4][5].…”

A comparative study on MOVPE InN grown on Ga‐ and N‐polarity bulk GaN

“…Moreover, the decomposition efficiency of ammonia and the amount of hydrogen generated by ammonia decomposition in MOVPE growth should be considered of here. Koukitu et al [11] have analyzed the MOVPE growth from a thermodynamic point of view for binary nitrides: GaN, InN and AlN. They reported that the growth area in the phase diagram for the deposition of InN decreases dastically with increasing α from 0.0 to 0.05 (α is the mole fraction of decomposed ammonia).…”

Influence of lattice constraint from InN and GaN substrate on relationship between input mole ratio and solid composition of InGaN during MOVPE

“…(5)- (11), equilibrium partial pressures and the relationship between input mole ratio R In and solid composition x of In x Ga 1-x N were calculated by a method similar to that developed previously [15][16][17][18]. Figures 1(a)-(c) show the solid composition x of In x Ga 1-x N as a function of input mole ratio R In for stress-free InGaN, InGaN on GaN and InGaN on InN, respectively.…”