Thermodynamic modelling of the O–Sn system

Study of the Defects in Sintered SnO2 by High‐Resolution Transmission Electron Microscopy and Cathodoluminescence

“…[17] Moreover, the decomposition of SnO 2 into SnO, according to the reaction SnO 2 Ǟ SnO + V O -, at high temperatures, has to be considered. These processes begin with the formation of intermediate phases, such as Sn 3 O 4 , SnO, and even metallic Sn, by internal oxygen disproportionate allocation, depending on the temperature and atmosphere conditions, as described by Cahen et al [18] Many crystal defects, including twinning, crystallographic shear planes (CSP), stacking faults, and oxygen vacancies, are formed during these processes. In our case, the partial SnO formation was observed when the SnO 2 material was treated at high temperatures in air.…”

Ambipolar Oxide Thin‐Film Transistor

“…[ 16 ] It is known that SnO 2 , which exhibits n -type conduction, is easily formed by the oxidation of SnO. [ 24 ] Thus we should that a material with a small indirect/forbidden transition gap and a large allowed direct transition gap is a good candidate for transparent ambipolar semiconductors and SnO shows promise as a channel layer in transparent ambipolar transistors. Here, we report the performance of ambipolar TFTs fabricated using polycrystalline SnO as an active channel layer and complementary-like inverters using two SnO-based ambipolar TFTs.…”

Sn3O4 single crystal nanobelts grown by carbothermal reduction process

“…According to the experimental phase diagram proposed by Moh [15], Sn 3 O 4 is a stable compound at temperatures lower than 723 K. A binary phase diagram for a wide temperature range describing the Sn-O system was proposed by McPherson and Hanson [16], where IO was also found. More recently, Cahen et al [17] improved the Sn-O phase diagram, calculating the thermodynamic equilibrium using data collected from literature. In this diagram IO should be formed at temperatures lower than 1000 K.…”