Sn3O4 single crystal nanobelts grown by carbothermal reduction process

Damaschio, Cleocir Jose; Berengue, Olívia M.; Stroppa, Daniel G.; Simon, R. A.; Ramírez, Antonio J.; Schreiner, W. H.; Chiquito, A. J.; Leite, Edson R.

doi:10.1016/j.jcrysgro.2010.07.022

Cited by 20 publications

(10 citation statements)

References 22 publications

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“…Our analysis is based on Sn 3 O 4 thin films prepared by three different approaches. Furthermore, Raman spectra reported in literature for nanostructures of the intermediate tin oxide phase are in accordance with our spectra [8,49]. We believe that it is very likely that Sn 3 O 4 is obtained as intermediate phase independent of the synthesis process and that previous reports of observed Sn 2 O 3 might be faulty due to the difficulties to distinguish the monoclinic structures of Sn 2 O 3 and Sn 3 O 4 by standard diffraction analysis.…”

Section: Discussionsupporting

confidence: 90%

Raman studies of the intermediate tin-oxide phase

Eifert

Becker

Reindl

et al. 2017

Phys. Rev. Materials

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The existence of an intermediate phase of tin oxide was first reported in 1882. However, its stoichiometry and its crystal structure have been dubious and heavily debated ever since, despite a multitude of structural investigations. We show that Raman spectroscopy combined with ab initio theory offers a viable alternative for structure determination in cases where diffraction studies are inconclusive. We unambiguously identify the intermediate phase as Sn 3 O 4 and rule out the other likely candidate, Sn 2 O 3. We assign the one-phonon Raman signals of Sn 3 O 4 to the mode symmetries of the corresponding point group C 2h and confirm that P 2 1 /c with 14 atoms per unit cell is the space group of Sn 3 O 4 .

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Section: Discussionsupporting

confidence: 90%

Raman studies of the intermediate tin-oxide phase

Eifert

Becker

Reindl

et al. 2017

Phys. Rev. Materials

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“…The unrecorded peaks in the XRD correspond to small contributions of SnO and SnO 2 . It is known that Sn 3 O 4 grows in a layered structure composed by SnO and SnO 2 layers [13] and we believe that the observation of SnO and SnO 2 peaks in our diffractogram are due to this growth mechanism.…”

Section: Discussionsupporting

confidence: 51%

Field Effect Transistors based in a Sn3O4 nanobelt

Gonçalves

Amaral

Baldan

et al. 2017

Brazilian Workshop on Semiconductor Physics

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In this work, high quality single crystalline Sn3O4 nanobelts grown by the vapor-solid (VS) method associated to a carbothermal reduction process were studied. Field Effect Gun Scanning Electronic Microscopy confirmed the growth of belt-like nanostructures by the VS method. X-Ray Diffraction revealed that the synthesis resulted in monocrystalline belts of high crystalline quality and preferential growth orientation. Semiconductor character of samples was detected by temperature-dependent resistivity measurements and the variable range hopping (VRH) was found to be the main mechanism of electronic transport in a large range of temperatures. A Field Effect Transistor (FET) based in a single nanobelt of Sn3O4 was built in order to obtain key parameters of the nanobelt since it is the active channel in the device. The transistor was characterized by current-voltage curves from which we found the Sn3O4 channel to be n-type. The density of free carriers was found to be 5,07x10 17 cm-3 and mobility was found to be 11,5 cm 2 /V.s. The field effect properties of the Sn3O4 nanobelts were also studied under UV illumination. The results indicate that the conductance is an order of magnitude greater in this condition than in dark and this photoconductive behavior was associated to the presence of oxygen vacancies in Sn3O4 structure releasing free carriers to the channel.

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“…Previous work showed that Sn 3 O 4 could behave as an n-type semiconductor with dominant electron transport mechanism described by variable range hopping38. Further work is needed to study the influence of the Sn 3 O 4 phase to SnO TFTs.…”

Section: Resultsmentioning

confidence: 99%

Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power

Liu

Xin

et al. 2016

Sci Rep

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An extremely sensitive dependence of the electronic properties of SnOx film on sputtering deposition power is discovered experimentally. The carrier transport sharply switches from n-type to p-type when the sputtering power increases by less than 2%. The best n-type carrier transport behavior is observed in thin-film transistors (TFTs) produced at a sputtering power just below a critical value (120 W). In contrast, at just above the critical sputtering power, the p-type behavior is found to be the best with the TFTs showing the highest on/off ratio of 1.79 × 104 and the best subthreshold swing among all the sputtering powers that we have tested. A further increase in the sputtering power by only a few percent results in a drastic drop in on/off ratio by more than one order of magnitude. Scanning electron micrographs, x-ray diffraction spectra, x-ray photoelectron spectroscopy, as well as TFT output and transfer characteristics are analyzed. Our studies suggest that the sputtering power critically affects the stoichiometry of the SnOx film.

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Sn3O4 single crystal nanobelts grown by carbothermal reduction process

Cited by 20 publications

References 22 publications

Raman studies of the intermediate tin-oxide phase

Raman studies of the intermediate tin-oxide phase

Field Effect Transistors based in a Sn3O4 nanobelt

Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power

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