A mass spectrometer has been coupled to an open tube vapor phase crystal growth apparatus in order to study vapor phase processes leading to the deposition of
GaAsxP1−x
crystals. Examination of the HCl transport of gallium showed that
GaClfalse(normalgfalse)
was the main transporting species. It was found that vapor resulting from the thermal decomposition of
ASH3
,
PH3
, and
PH3‐AsH3
mixtures is very complex; dimers and tetramers of As and P, as well as various mixed species of the type
AsxPy false(x+y=2 normalor 4false)
, were present in the vapor phase. The reaction governing the deposition of
GaAsxP1−x
crystals was found to be normalGaCl)(g+1zMz)(g+12H2)(g→GaM)(s+HCl)(g where
M=normalAs orP
. It was established that the mixed
AsxPy
species also readily participate in the deposition reaction. Significant deviations from thermochemical equilibrium were detected in the deposition system. The causes of these deviations and their influence on the deposition process are discussed.