Thermo-optic properties of silicon-rich silicon nitride for on-chip applications

Nejadriahi, Hani; Friedman, A.; Sharma, Rajat; Pappert, S.A.; Fainman, Yeshaiahu; Yu, Paul K. L.

doi:10.1364/oe.396969

Cited by 40 publications

(17 citation statements)

References 34 publications

(32 reference statements)

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“…where α sub is the thermal expansion coefficient of the silicon dioxide, λ is the resonance wavelength, and n g is the group index of the waveguide. The change of the effective index is due to the interaction of the mode with the waveguide core and cladding and can be related to the change of the materials' index as [16]: (2) where Γ is the overlap integral of the SiC waveguide core and the silicon dioxide cladding and dn dT…”

mentioning

confidence: 99%

High thermo-optic tunability in PECVD silicon-rich amorphous silicon carbide

Chang¹,

Pappert²,

Yu³

2023

Opt. Lett.

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In this work, the thermo-optic coefficient (TOC) of the silicon-rich amorphous silicon carbide (a-SiC) thin film deposited by plasma-enhanced chemical vapor deposition (PECVD) was characterized. We found that the TOC of the film increases as its silicon content increases. A more than threefold improvement in the TOC was measured, reaching a TOC as high as 1.88×10−4∘C−1, which is comparable to that of crystalline silicon. An efficient thermo-optic phase shifter has also been demonstrated by integrating the silicon-rich a-SiC micro-ring structure with a NiCr heater. Tunability of 0.117 nm/mW was demonstrated, and a corresponding tuning efficiency P π as low as 4.2 mW has been measured at an optical wavelength of 1550 nm. These findings make silicon-rich a-SiC a good candidate material for thermo-optic applications in photonic integrated circuits.

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confidence: 99%

High thermo-optic tunability in PECVD silicon-rich amorphous silicon carbide

Chang¹,

Pappert²,

Yu³

2023

Opt. Lett.

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“…However special attention should be given to the effect of temperature when targeting small limits of detection. The thermo-optic coefficient of silicon nitride is dependent on temperature, wavelength, and silicon content of the film produced [29]. At room temperature and wavelengths 600-800 nm, thermo-optic coefficients have been reported in the range 10 −5 to 10 −4 K −1 [30].…”

Section: Resultsmentioning

confidence: 99%

Silicon Nitride Interferometers for Optical Sensing with Multi-micron Dimensions

Costa

Almeida²,

Fantoni³

et al. 2022

J. Phys.: Conf. Ser.

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Increasing the size of the smallest features of Photonic Integrated Circuits (PICs) to multi-micron dimensions can be advantageous to avoid expensive and complex lithographic steps in the fabrication process. In applications where extremely reduced chip size is not a requirement, the design of devices with multi-micron dimensions is potential interesting to avoid the need for e-beam lithography. Another benefit is that making the dimensions larger reduces the effect of lithographic imperfections such as waveguide surface roughness. However, the benefits do not come without limitations. Coupling the light in and out of the circuit is more challenging since diffraction gratings are not available when designing for such large dimensions. Circuit bends must have a larger radius of curvature and the existence of multimode propagation conditions can have detrimental impact in the performance of several devices, such as interferometers. In this study we perform simulations of the coupling between a lensed multimode optical fiber and a multi-micron a-SiN:H rib waveguide. Light coupling efficiency is analyzed as a function of distance variations using the FDTD method and compared with coupling to a strip waveguide. Moreover, we use numerical simulations to study the performance of a Mach-Zehnder interferometer sensitive to refractive index variations. Both the interferometer, splitters and combiners are designed with multi-micron dimensions.

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“…In this work we choose to utilize a bus-coupled racetrack ring resonator and a TM-polarized optical mode to carry out electrooptic characterization of the all-normal components of the SRN film's susceptibility tensors (see Fig 1(a)). Details of the PECVD SRN film deposition are outlined in our previous work [13]. In parallel we also prepared samples of Au-SRN-Au capacitors in order to confirm the safe operating range of electric fields for these films.…”

Section: Design and Fabricationmentioning

confidence: 99%

Demonstration of the DC-Kerr effect in silicon-rich nitride

et al. 2021

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We demonstrate the DC-Kerr effect in PECVD Silicon-rich Nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility, 𝝌 (𝟑) , as high as (6 + 0.58)x10 -19 m 2 /v 2 . We employ spectral shift versus applied voltage measurements in a racetrack ring resonator as a tool by which to characterize the nonlinear susceptibilities of these films. In doing so we demonstrate a 𝝌 (𝟑) larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase-shifters while maintain a low thermal budget using a deposition technique readily available in CMOS process flows.

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Thermo-optic properties of silicon-rich silicon nitride for on-chip applications

Cited by 40 publications

References 34 publications

High thermo-optic tunability in PECVD silicon-rich amorphous silicon carbide

High thermo-optic tunability in PECVD silicon-rich amorphous silicon carbide

Silicon Nitride Interferometers for Optical Sensing with Multi-micron Dimensions

Demonstration of the DC-Kerr effect in silicon-rich nitride

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