Demonstration of the DC-Kerr effect in silicon-rich nitride

Friedman, A.; Nejadriahi, Hani; Sharma, Rajat; Fainman, Yeshaiahu

doi:10.1364/ol.432359

Cited by 10 publications

(3 citation statements)

References 25 publications

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“…The high VπL of our device is made possible by the combination of its vertical cylindrical topology, hybrid plasmonic guided modes, relatively high r33 of SRN, and Fabry-Pérot resonance in the vertical direction of propagation. Furthermore, the device's performance can be further improved by utilizing a nonlinear material such as silicon-rich nitride (SRN), which has been shown to demonstrate a third-order nonlinear susceptibility, χ 3 , as high as (6 ± 0.58) × 10 −19 m 2 /V with an index equals to 3.01 [11].…”

Section: Discussionmentioning

confidence: 99%

“…The oval shape of the mode is due to the superposition of degenerate TE and TM modes. The vertical polarization in Figures 2(a Silicon Rich Nitride (SRN) as a nonlinear material provides an optimal material since the material index often combines second and third-order nonlinear susceptibility contributions; this is due to the contribution of Pockets and DC-Kerr effects, respectively [11]. Moreover, SRN has lower optical loss and higher breaking voltage [12,13] The utilized SRN has been characterized to have χ(2) of 22.7 pm/V at a refractive index of 2.25 [14].…”

Section: Design and Simulationsmentioning

confidence: 99%

See 1 more Smart Citation

Vertical-cavity surface-emitting phase shifter

Almutairi

Smolyaninov

Ingram

et al. 2021

Light-Emitting Devices, Materials, and Applications XXV

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This study proposes a novel technique for a 2D beam steering system using hybrid plasmonic phase shifters with a cylindrical configuration in a 2D periodic array suitable for LIDAR applications. A nanoscale VCSEP design facilitates a sub-wavelength spacing between individual phase shifters, yielding an expanded field of view and side lobes suppression. The proposed design includes a highly doped sub-micron silicon pillar covered by a thin layer of nonlinear material and an additional conductive metal layer. Characterization of a single VCSEP demonstrated a Free Spectral Range (FSR) of 53.28 ± 2.5 nm and a transmission variation of 3dB, with VπL equal to 0.075 V-mm.

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Section: Discussionmentioning

confidence: 99%

Section: Design and Simulationsmentioning

confidence: 99%

Vertical-cavity surface-emitting phase shifter

Almutairi

Smolyaninov

Ingram

et al. 2021

Light-Emitting Devices, Materials, and Applications XXV

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“…Additionally, even though the physical mechanism that gives rise to the emission of light in SiN films has not been clarified yet, control over the Si nitride films by a doping process using nitrogen atoms by ion-implantation (which is a fully CMOS compatible technique) has been reported [11]. On the other hand, Si-rich silicon nitride has also been reported to present enhanced Kerr nonlinearity with respect to the standard stoichiometric Si 3 N 4 materials [6,8,[12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Driving Third-Order Optical Nonlinearities in Photoluminescent Si Nanoparticles by Nitrogen Co-Implantation in a Silica Matrix

et al. 2022

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The photoluminescence and third-order nonlinear optical effects of co-implanted silicon nanoparticles and nitrogen ions in a silica matrix were studied. Experimental evidence shows the potential of nitrogen ions for changing optical properties exhibited by silicon nanoparticles implanted in an integrated system. The modification of the optical bandgap and photoluminescent intensity in the studied nanomaterials by the incorporation of nitrogen was analyzed. Standard two−wave mixing experiments were conducted using nanosecond and picosecond laser pulses at 532 nm wavelength. At this off-resonance condition, only multiphoton excitation can promote electrons at energies above the optical bandgap of the silicon nanoparticles. The picosecond results show that the co-implanted sample with nitrogen exhibits a three-fold enhancement of the nonlinear Kerr response. Femtosecond z-scan measurements were undertaken at 800 nm in order to explore the modification of the ultrafast nonlinear response of the samples that revealed a purely electronic Kerr nonlinearity together to saturable absorption of the SiNPs in the near-infrared. Remarkably, femtosecond results reveal that nitrogen co-implantation in the SiNPs system derives from the quenching of the third-order nonlinear optical behavior. These findings pointed out a simple approach for engineering the optical bandgap of nanocomposites, which can be controlled by a doping process based on ion-implanted nitrogen. It is highlighted that the enhanced light-matter interactions induced by nitrogen implantation can be useful for developing nonlinear integrated silicon photonics nanodevices with low power excitation.

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Dynamics of Nonlinear Optical Losses in Silicon‐Rich Nitride Nano‐Waveguides

Belogolovskii,

Fainman,

Alic

2024

Advanced Optical Materials

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Free carrier absorption (FCA) is established to be the cause of nonlinear losses in plasma‐enhanced chemical vapor deposition (PECVD) silicon‐rich nitride (SRN) waveguides. To validate this hypothesis, a photo‐induced current is measured in SRN thin films with refractive indices varying between 2.5 and 3.15 when a C‐band laser light is illuminating the SRN films at various powers, indicating the generation of free carriers. Furthermore, nonlinear loss dynamics is, for the first time, measured and characterized in detail in SRN waveguides by utilizing high peak power C‐band complex shape optical pulses for estimation of free carrier generation (FCG) and free carrier recombination (FCR) lifetimes and their dynamics. Both FCG and FCR are found to decrease with an increase in the refractive index of SRN, and, specifically, the FCR lifetimes are found (92 ± 7) ns, (39 ± 3) ns, and (31 ± 2) ns for the SRN indices of 2.7, 3, and 3.15, respectively. Lastly, nonlinear losses in high refractive index SRN waveguides are demonstrated to be minimized and altogether avoided when the pulse duration reduced below the free carrier generation lifetime, thus providing a way of taking a full advantage of the large inherent SRN nonlinear properties.

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Demonstration of the DC-Kerr effect in silicon-rich nitride

Cited by 10 publications

References 25 publications

Vertical-cavity surface-emitting phase shifter

Vertical-cavity surface-emitting phase shifter

Driving Third-Order Optical Nonlinearities in Photoluminescent Si Nanoparticles by Nitrogen Co-Implantation in a Silica Matrix

Dynamics of Nonlinear Optical Losses in Silicon‐Rich Nitride Nano‐Waveguides

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