Thermo-mechanical characterization of copper through-silicon vias (Cu-TSVs) using micro-Raman spectroscopy and atomic force microscopy

Bayat, Parisa; Vogel, Dietmar; Rodriguez, Raúl D.; Sheremet, Evgeniya; Zahn, Dietrich R. T.; Rzepka, Sven; Michel, B.

doi:10.1016/j.mee.2015.02.004

Cited by 28 publications

(7 citation statements)

References 17 publications

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“…The profiles can be subdivided in an increasing part starting in the center of TSV and TSV group, respectively, versus a decay following a power law with increasing distance R from the center of TSV and TSV group, respectively. Similar profiles of s r and s r þ s f were presented by Ryu et al [7] and Zhu et al [10], respectively, for single TSVs. We follow the argumentation in Ref.…”

Section: Samplesupporting

confidence: 84%

“…This resulted in a zero-stress temperature of 340 K by means of extrapolation. The value of T 0 seems to be relatively low in view of usual process temperatures >>400 K (e.g., [6,9,10]) but it is close to that one determined in the copper of TSV by Liu et al [11].…”

Section: Figuresupporting

confidence: 81%

“…Even if the TSV technology has been established as a standard process it lacks non-destructive and fast characterization tools for process optimization and quality control. As a complement to the versatile simulation studies (e.g., [5,6]) Scanning Acoustic Microscopy and Photo-elastic Microscopy have been under discussion [7] as an alternative to Raman microscopy (e.g., [8][9][10][11]) and X-ray diffraction [12].…”

mentioning

confidence: 99%

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A photo‐elastic microscopy study of the temperature dependency of stress induced by through silicon vias in silicon

Herms¹,

Wagner²,

Messemaeker

et al. 2017

Phys. Status Solidi C

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SIREX (Scanning Infrared Stress Explorer) is a photo‐elastic microscope in this case applied to characterize the temperature dependence of stress induced by copper Through Silicon Via (TSV) structures in silicon. The temperature was varied between 285 and 320 K. SIREX provides images of the lateral distribution of Δσ being the difference of the in‐plane principal stress components. The single TSV as well as the TSV group are considered as point‐like stress sources. The related single radial profiles of Δσ are quantitatively analysed. It is confirmed that the profiles at large distance from the TSV can be described by Lamé's law (Δσ ∼ R‐m, m ≈ 2) modified by a term of temperature dependency. The stress decreases linearly with temperature. These experiments allow for estimating the zero stress temperature.

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Section: Samplesupporting

confidence: 84%

Section: Figuresupporting

confidence: 81%

mentioning

confidence: 99%

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A photo‐elastic microscopy study of the temperature dependency of stress induced by through silicon vias in silicon

Herms¹,

Wagner²,

Messemaeker

et al. 2017

Phys. Status Solidi C

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“…This review presents a comprehensive overview from theory to application, including Raman measurement principles, the basic theory of Raman-stress relations, principles for selecting Raman excitation light, and the primary fields of application [149] Copyright 2015, Elsevier.…”

Section: Discussionmentioning

confidence: 99%

Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

Yang,

Wang,

Chen

et al. 2024

Laser & Photonics Reviews

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In the rapidly evolving era of information and intelligence,microelectronic devices are pivotal across various fields, such as mobile devices, big data computing, electric vehicles, and aerospace. However, the electrical performance of these devices often suffers due to residual stress from microelectronic manufacturing. This issue is compounded by the additional thermal stress that accumulates during device operation. Therefore, it is essential to understand, characterize, and control this residual stress to ensure the reliability and efficiency of microelectronic devices. Raman spectroscopy emerges as an invaluable tool for nondestructive, fast, noncontact, and precise testing of micro‐scale mechanics, significantly aiding in stress and strain analysis within microelectronic manufacturing. This article aims to provide a thorough overview of the theory and application beyond a mere compilation of recent advances. Theoretically, it critically evaluates existing models that describe the Raman‐stress relation. Practically, it explores the application of Raman spectroscopy in researching residual stress in various components, including substrate materials, epitaxial films, and packaging. Through a detailed examination of current applications, it highlights the significance of Raman spectroscopy in understanding micro‐scale mechanics. Finally, it offers both theoretical and practical insights into the future developments of Raman‐stress detection technology.

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“…19) In the investigation of stress level, the stresses at the surface or several micrometers below can be measured by nondestructive methods. [20][21][22][23][24] However, to investigate the stress near potential device locations, a cross section is required to reveal the surface for the measurement. Note that any destructive action to obtain a cross section, such as cutting or chemical mechanical polishing (CMP), changes the stress situation.…”

Section: Introductionmentioning

confidence: 99%

Residual stress investigation of via-last through-silicon via by polarized Raman spectroscopy measurement and finite element simulation

Feng¹,

Watanabe²,

Shimamoto³

et al. 2018

Jpn. J. Appl. Phys.

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The residual stresses induced around through-silicon vias (TSVs) by a fabrication process is one of the major concerns of reliability. We proposed a methodology to investigate the residual stress in a via-last TSV. Firstly, radial and axial thermal stresses were measured by polarized Raman spectroscopy. The agreement between the simulated stress level and measured results validated the detail simulation model. Furthermore, the validated simulation model was adopted to the study of residual stress by element death/birth methods. The residual stress at room temperature concentrates at passivation layers owing to the high fabrication process temperatures of 420 °C for SiN film and 350 °C for SiO2 films. For a Si substrate, a high-level stress was observed near potential device locations, which requires attention to address reliability concerns in stress-sensitive devices. This methodology of residual stress analysis can be adopted to investigate the residual stress in other devices.

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Thermo-mechanical characterization of copper through-silicon vias (Cu-TSVs) using micro-Raman spectroscopy and atomic force microscopy

Cited by 28 publications

References 17 publications

A photo‐elastic microscopy study of the temperature dependency of stress induced by through silicon vias in silicon

A photo‐elastic microscopy study of the temperature dependency of stress induced by through silicon vias in silicon

Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

Residual stress investigation of via-last through-silicon via by polarized Raman spectroscopy measurement and finite element simulation

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